FS7KM-18A Mitsubishi Electric Semiconductor, FS7KM-18A Datasheet - Page 2

• Manufacturer Part Number: FS7KM-18A
• Description: HIGH-SPEED SWITCHING USE
• Manufacturer: Mitsubishi Electric Semiconductor

ELECTRICAL CHARACTERISTICS
PERFORMANCE CURVES
V
V
I
I
V
r
V
C
C
C
t
t
t
t
V
R
GSS
DSS
d (on)
r
d (off)
f
Symbol
DS (ON)
y
GS (th)
DS (ON)
SD
iss
oss
rss
th (ch-c)
(BR) DSS
(BR) GSS
fs
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
50
40
30
20
10
20
16
12
POWER DISSIPATION DERATING CURVE
0
8
4
0
0
0
DRAIN-SOURCE VOLTAGE V
Parameter
P
T
Pulse Test
CASE TEMPERATURE T
D
OUTPUT CHARACTERISTICS
C
= 30W
= 25°C
10
50
(TYPICAL)
20
100
V
GS
(Tch = 25 C)
30
= 20V
I
I
V
V
I
I
I
I
V
V
I
Channel to case
D
G
D
D
D
D
S
GS
DS
DS
DD
= 3A, V
= 1mA, V
= 1mA, V
= 3A, V
= 3A, V
= 3A, V
= 100 A, V
150
= 250V, V
= 25V, V
= 25V, V
= 150V, I
C
40
(°C)
DS
GS
GS
DS
GS
10V
GS
DS
(V)
GS
7V
6V
5V
= 10V
= 10V
= 10V
= 0V
D
DS
GS
200
= 0V
= 10V
50
DS
= 3A, V
= 0V, f = 1MHz
= 0V
= 0V
= 0V
Test conditions
GS
= 10V, R
GEN
10
10
10
10
= R
–1
5
3
2
7
5
3
2
7
5
3
2
7
5
8
6
4
2
0
1
0
10
0
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE V
GS
P
30W
0
T
Single Pulse
D
C
2 3 5 7 10
= 50
OUTPUT CHARACTERISTICS
=
= 25°C
MITSUBISHI Nch POWER MOSFET
4
V
GS
= 20V 10V 7V
HIGH-SPEED SWITCHING USE
1
(TYPICAL)
8
2 3 5 7 10
Min.
250
2.2
—
—
—
—
—
—
—
—
—
—
—
—
—
30
2
12
Limits
T
Pulse Test
0.63
1.90
2
Typ.
370
3.5
1.5
C
80
16
15
22
50
26
—
—
—
—
—
3
2 3 5 7 10
= 25°C
16
tw=10µs
100µs
1ms
10ms
DC
DS
DS
FS7KM-5
6V
5V
(V)
(V)
Max.
0.80
2.40
4.17
2.0
20
—
—
—
—
—
—
—
—
—
—
10
1
4
3
Feb.1999
Unit
C/W
mA
pF
pF
pF
ns
ns
ns
ns
V
V
V
V
S
V
A