FS7KM-18A Mitsubishi Electric Semiconductor, FS7KM-18A Datasheet - Page 3

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FS7KM-18A

Manufacturer Part Number
FS7KM-18A
Description
HIGH-SPEED SWITCHING USE
Manufacturer
Mitsubishi Electric Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FS7KM-18A
Manufacturer:
MIT
Quantity:
5 000
Part Number:
FS7KM-18A
Manufacturer:
MITSUBISHI
Quantity:
12 500
10
10
10
10
40
32
24
16
10
8
0
8
6
4
2
0
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
0
0
0
3 5 7 10
DRAIN-SOURCE VOLTAGE V
GATE-SOURCE VOLTAGE V
GATE-SOURCE VOLTAGE V
TRANSFER CHARACTERISTICS
Tch = 25°C
f = 1MHz
V
GS
DRAIN-SOURCE VOLTAGE
GATE-SOURCE VOLTAGE
ON-STATE VOLTAGE VS.
= 0V
4
4
0
CAPACITANCE VS.
2 3 5 7 10
(TYPICAL)
(TYPICAL)
(TYPICAL)
8
8
1
12
12
2 3
T
Pulse Test
T
V
Pulse Test
C
C
DS
5 7 10
= 25°C
I
= 25°C
16
16
D
= 50V
= 14A
GS
GS
DS
Ciss
Coss
Crss
2
(V)
(V)
7A
3A
(V)
2 3
20
20
10
10
10
10
10
10
–1
10
10
5
4
3
2
1
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
1
0
3
2
1
10
FORWARD TRANSFER ADMITTANCE
–1
–1
0
SWITCHING CHARACTERISTICS
T
Pulse Test
2 3
C
ON-STATE RESISTANCE VS.
2 3
2 3
= 25°C
MITSUBISHI Nch POWER MOSFET
DRAIN CURRENT I
DRAIN CURRENT I
DRAIN CURRENT I
5 7 10
VS.DRAIN CURRENT
125°C
DRAIN CURRENT
HIGH-SPEED SWITCHING USE
5 7 10
5 7 10
(TYPICAL)
0
(TYPICAL)
(TYPICAL)
75°C
2 3 5 7 10
V
Tch = 25°C
V
V
R
GS
1
0
DD
GS
T
GEN
C
= 10V
= 25°C
= 10V
= 150V
2 3
2 3
= R
t
t
t
d(off)
f
d(on)
V
Pulse Test
1
D
D
D
DS
GS
2 3 5 7 10
(A)
(A)
t
(A)
r
20V
= 10V
= 50
5 7 10
5 7 10
FS7KM-5
2
1
2
Feb.1999

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