FS7KM-18A Mitsubishi Electric Semiconductor, FS7KM-18A Datasheet - Page 4

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FS7KM-18A

Manufacturer Part Number
FS7KM-18A
Description
HIGH-SPEED SWITCHING USE
Manufacturer
Mitsubishi Electric Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
FS7KM-18A
Manufacturer:
MIT
Quantity:
5 000
Part Number:
FS7KM-18A
Manufacturer:
MITSUBISHI
Quantity:
12 500
10
10
10
1.4
1.2
1.0
0.8
0.6
0.4
20
16
12
–1
8
4
0
7
5
3
2
7
5
3
2
1
0
0
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
Tch = 25°C
I
V
I
Pulse Test
–50
–50
V
I
D
D
D
GS
GS
ON-STATE RESISTANCE VS.
BREAKDOWN VOLTAGE VS.
= 7A
= 1/2I
= 1mA
CHANNEL TEMPERATURE
CHANNEL TEMPERATURE
GATE-SOURCE VOLTAGE
= 10V
= 0V
GATE CHARGE Q
4
VS.GATE CHARGE
D
0
0
(TYPICAL)
(TYPICAL)
(TYPICAL)
8
50
50
12
V
100V
DS
100
100
g
= 50V
(nC)
16
200V
150
150
20
10
10
10
10
–1
–2
7
5
3
2
7
5
3
2
7
5
3
2
1
0
10
–4
2 3 57
D=1
0.5
0.2
5.0
4.0
3.0
2.0
1.0
20
16
12
8
4
0
0
10
0
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE
SOURCE-DRAIN VOLTAGE V
–3
0.05
0.02
0.01
Single Pulse
–50
V
I
2 3 57
T
FORWARD CHARACTERISTICS
D
DS
C
0.1
THRESHOLD VOLTAGE VS.
= 1mA
CHANNEL TEMPERATURE
= 125°C
0.8
= 10V
SOURCE-DRAIN DIODE
PULSE WIDTH t
10
CHARACTERISTICS
MITSUBISHI Nch POWER MOSFET
–2
0
2 3 57
(TYPICAL)
1.6
(TYPICAL)
HIGH-SPEED SWITCHING USE
50
10
–1
2.4
2 3 5710
75°C
25°C
100
w
V
Pulse Test
(s)
GS
3.2
0
P
2 3 5710
= 0V
tw
D=
SD
DM
150
T
tw
(V)
T
FS7KM-5
4.0
1
2 3 5710
Feb.1999
2

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