MT29F1G08ABBHC-ET Micron, MT29F1G08ABBHC-ET Datasheet - Page 12

• Manufacturer Part Number: MT29F1G08ABBHC-ET
• Description: NAND Flash Memory; Density: 1Gb; Organization: 128Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 1.8V; Operating Temperature Range: -40° to +85°C; Package: 63-VFBGA
• Manufacturer: Micron

Figure 4:
Table 2:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
Cycle
First
Second
Third
Fourth
Cache register
Data register
1,024 blocks
per device
Array Addressing: MT29F1G08 (x8)
Array Organization for MT29F1G08 (x8)
BA15
LOW
I/O7
CA7
BA7
Notes: 1. Block address concatenated with page address = actual page address. CAx = column
2. Note that the 12-bit column address is capable of addressing from 0 to 4,095 bytes on a x8
address; PAx = page address; BAx = block address.
device; however, only bytes 0 through 2,111 are valid. Bytes 2,112 through 4,095 of each
page are “out of bounds,” do not exist in the device, and cannot be addressed.
BA14
LOW
I/O6
CA6
BA6
2,048
2,048
1 block
BA13
LOW
I/O5
CA5
PA5
2,112 bytes
BA12
LOW
12
I/O4
CA4
PA4
64
64
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CA11
BA11
I/O3
CA3
PA3
1Gb: x8, x16 NAND Flash Memory
1 page
1 block
1 device = (2K + 64) bytes x 64 pages
I/O 7
I/O 0
= (2K + 64 bytes)
= (2K + 64) bytes x 64 pages
= (128K + 4K) bytes
= 1,056 Mbits
CA10
BA10
I/O2
CA2
PA2
x 1,024 blocks
©2006 Micron Technology, Inc. All rights reserved.
I/O1
CA1
CA9
BA9
PA1
Addressing
I/O0
CA0
CA8
BA8
PA0