MT29F1G08ABBHC-ET Micron, MT29F1G08ABBHC-ET Datasheet - Page 45

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MT29F1G08ABBHC-ET

Manufacturer Part Number
MT29F1G08ABBHC-ET
Description
NAND Flash Memory; Density: 1Gb; Organization: 128Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 1.8V; Operating Temperature Range: -40° to +85°C; Package: 63-VFBGA
Manufacturer
Micron
Datasheet

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Figure 36:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
command
UNLOCK command
with invert area
LOCK
WP# LOW > 100ns
bit = 1
WP# LOW
Locked-tight range
BLOCK LOCK Flow Chart
Entire NAND Flash
array locked tight
Unlocked range
Unlocked range
Unlocked range
Unlocked range
>100ns
Locked range
LOCK-TIGHT command
with WP# and LOCK HIGH
LOCK-TIGHT command
with WP# and
LOCK HIGH
Entire NAND Flash
UNLOCK command with invert area bit = 1
UNLOCK command invert area bit = 0
array locked
Power-up with
LOCK HIGH
UNLOCK command with
LOCK command
45
invert area bit = 1
WP# LOW > 100ns
Power-up
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Locked-tight range
Locked-tight range
1Gb: x8, x16 NAND Flash Memory
Unlocked range
Unlocked range
Locked range
Locked range
Power-up with
UNLOCK command with
invert area bit = 0
LOCK-TIGHT command
with WP# and LOCK HIGH
LOCK LOW
(default)
Command Definitions
BLOCK LOCK function
©2006 Micron Technology, Inc. All rights reserved.
UNLOCK command with
invert area bit = 0
disabled

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