MT29F1G08ABBHC-ET Micron, MT29F1G08ABBHC-ET Datasheet - Page 52

• Manufacturer Part Number: MT29F1G08ABBHC-ET
• Description: NAND Flash Memory; Density: 1Gb; Organization: 128Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 1.8V; Operating Temperature Range: -40° to +85°C; Package: 63-VFBGA
• Manufacturer: Micron

V
Figure 43:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
CC
Power Cycling
AC Waveforms During Power Transitions
Notes: 1. If the system requires the LOCK features to be enabled, then the LOCK signal must be
Micron NAND Flash devices are designed to prevent data corruption during power tran-
sitions. V
tection during power transitions.) When V
be allowed for the Flash device to initialize before any commands are executed (see
Figure 43 for the states of signals during V
The RESET command must be issued to all CE#s after the NAND Flash device is powered
on. Each CE# will be busy for a maximum of 1ms after a RESET command is issued.
LOCK
WP#
WE#
R/B#
ALE
I/Ox
CLE
CE#
RE#
V
CC
HIGH during power-up. If the LOCK features are to be disabled, then the LOCK signal
should be held LOW during power-up.
1.8V device: ≈ 1.5V
1
CC
is internally monitored. (The WP# signal permits additional hardware pro-
100µs
(MIN)
52
t CS
FFh
Micron Technology, Inc., reserves the right to change products or specifications without notice.
(MAX)
1ms
CC
CC
1Gb: x8, x16 NAND Flash Memory
power cycling).
reaches 1.5V, a minimum of 100µs should
Don’t Care
Electrical Characteristics
©2006 Micron Technology, Inc. All rights reserved.
1.8V device: ≈ 1.5V
Undefined