MCM63F733A Motorola, MCM63F733A Datasheet - Page 6

• Manufacturer Part Number: MCM63F733A
• Description: 128K x 32 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
• Manufacturer: Motorola

MCM63F733A
6
NOTES:
NOTES:
INTERLEAVED BURST ADDRESS TABLE
WRITE TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
PACKAGE THERMAL CHARACTERISTICS
Read
Read
Write Byte a
Write Byte b
Write Byte c
Write Byte d
Write All Bytes
Write All Bytes
Power Supply Voltage
I/O Supply Voltage
Input Voltage Relative to V SS for
Any Pin Except V DD
Input Voltage (Three–State I/O)
Output Current (per I/O)
Package Power Dissipation
Temperature Under Bias
Storage Temperature
Junction to Ambient (@ 200 lfm)
Junction to Board (Bottom)
Junction to Case (Top)
1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
2. This is a steady–state DC parameter that is in effect after the power supply has
3. Power dissipation capability is dependent upon package characteristics and use
1. Junction temperature is a function of on–chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient
2. Per SEMI G38–87.
3. Indicates the average thermal resistance between the die and the printed circuit board.
4. Indicates the average thermal resistance between the die and the case top surface via the cold plate method (MIL SPEC–883
1st Address (External)
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for extended
periods of time could affect device reliability.
achieved its nominal operating level. Power sequencing is not necessary.
environment. See Package Thermal Characteristics.
temperature, air flow, board population, and board thermal resistance.
Method 1012.1).
X . . . X00
X . . . X01
X . . . X10
X . . . X11
Rating
Cycle Type
V in , V out
Symbol
V DDQ
T bias
V DD
T stg
I out
V IT
Rating
(See Note 1)
P D
2nd Address (Internal)
X . . . X01
X . . . X00
X . . . X11
X . . . X10
– 0.5 to V DDQ + 0.5
– 0.5 to V DD + 0.5
(LBO = V DD )
V SS – 0.5 to V DD
– 0.5 to + 4.6
– 55 to + 125
– 10 to + 85
Value
1.2
20
SGW
Single–Layer Board
H
H
H
H
H
H
H
L
Four–Layer Board
Unit
mA
W
V
V
V
V
C
C
3rd Address (Internal)
SW
H
L
L
L
L
L
L
X
Notes
2
2
2
3
X . . . X10
X . . . X00
X . . . X01
X . . . X11
Symbol
SBa
R JA
R JB
R JC
X
H
H
H
H
X
L
L
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maxi-
mum rated voltages to this high–impedance
circuit.
This device contains circuitry to protect the
SBb
X
H
H
H
H
X
L
L
Max
40
25
17
9
MOTOROLA FAST SRAM
4th Address (Internal)
X . . . X11
X . . . X10
X . . . X01
X . . . X00
SBc
H
H
H
H
X
L
L
X
Unit
C/W
C/W
C/W
Notes
SBd
1, 2
H
H
H
H
X
X
L
L
3
4