MX25U8035 Macronix International, MX25U8035 Datasheet - Page 48

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MX25U8035

Manufacturer Part Number
MX25U8035
Description
(MX25U4035 / MX25U8035) 4M-BIT [x 1/x 2/x 4] 1.8V CMOS SERIAL FLASH
Manufacturer
Macronix International
Datasheet

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Quantity:
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ERASE AND PROGRAMMING PERFORMANCE
Note:
1. Typical program and erase time assumes the following conditions: 25°C, 1.8V, and checker board pattern.
2. Under worst conditions of 85°C and 1.65V.
3. System-level overhead is the time required to execute the first-bus-cycle sequence for the programming com-
4. The maximum chip programming time is evaluated under the worst conditions of 0C, VCC=1.8V, and 100K cycle
PARAMETER
Write Status Register Cycle Time
Sector Erase Cycle Time (4KB)
Block Erase Cycle Time (32KB)
Block Erase Cycle Time (64KB)
Chip Erase Cycle Time
Byte Program Time (via page program command)
Page Program Cycle Time
Erase/Program Cycle
LATCH-UP CHARACTERISTICS
Input Voltage with respect to GND on all power pins, SI, CS#
Input Voltage with respect to GND on SO
Current
Includes all pins except VCC. Test conditions: VCC = 1.8V, one pin at a time.
mand.
with 90% confidence level.
4M
8M
48
Min.
TYP. (1)
100,000
0.8
1.5
7.5
90
15
30
2
MX25U4035
MX25U8035
-100mA
-1.0V
-1.0V
MIN.
Max. (2)
200
220
300
1.6
13
25
3
7
REV. 1.0, MAR. 09, 2009
VCC + 1.0V
2 VCCmax
+100mA
MAX.
cycles
UNIT
ms
ms
ns
us
s
s
s
s
Datasheet pdf - http://www.DataSheet4U.net/

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