m30262f8gp Renesas Electronics Corporation., m30262f8gp Datasheet - Page 177

• Manufacturer Part Number: m30262f8gp
• Description: Renesas 16-bit Cmos Single-chip Microcomputer M16c Family / M16c/20 Series
• Manufacturer: Renesas Electronics Corporation.

Electrical Characteristics
Electrical Characteristics
Note : Specify a product of -40°C to 85°C to use it.
Tables 1.18.2a. & 1.18.2b. Electrical Characteristics for Flash ROM E/W Cycles
Table 1.18.1. Absolute maximum ratings
Table 1.18.2a. Characteristics (Note 1) for 100 E/W cycle products (D3, D5, U3, U5)
Table 1.18.2b. Characteristics (Note 6) for 10000 E/W cycle products (D7, D9, U7, U9) [Block A and Block B (Note 7)]
Note 1: When not otherwise specified, Vcc = 2.7-5.5V; Topr = 0-60 C.
Note 2: Vcc=5.0V; Topr = 25 C.
Note 3: Definition of E/W cycle: Each block may be written to a variable number of times - up to a maximum of the total number of
Note 4: Maximum number of E/W cycles for which operation is guaranteed.
Note 5: Topr = -40-85 C (D3, D7, U3, U7) / -20-85 C (D5, D9, U5, U9).
Note 6: When not otherwise specified, Vcc = 2.7-5.5V; Topr = -20-85 C (D9, U9) / -40-85 C (D7, U7).
Note 7: Table 1.18.2b applies for Block A or B E/W cycles > 1000. Otherwise, use Table 1.18.2a.
Note 8: To reduce the number of E/W cycles, a block erase should ideally be performed after writing as many different word
Note 9: Should erase error
Note 10: When Block A or B E/W cycles exceed 100 (D7, D9, U7, U9), select one wait state per block access. When
Note 11: Customers desiring E/W failure rate information should contact their Renesas technical support representative.
td(SR-ES)
td(SR-ES)
Symbol
Symbol
V
AV
V
V
P
T
T
S
opr
stg
CC
I
O
d
–
–
–
–
–
–
–
CC
ymbol
distinct word addresses - for every block erase. Performing multiple writes to the same address before an erase operation is
prohibited.
addresses (only one time each) as possible. It is important to track the total number of block erases.
command at least three times until erase error disappears.
FMR17 is set to "1", one wait state is inserted per access to Block A or B - regardless of the value of PM17.
Wait state insertion during access to all other blocks, as well as to internal RAM, is controlled by PM17 -
regardless of the setting of FMR17.
Erase/Write cycle (Note 3)
Word write time
Block erase time
Time delay from Suspend Request until Erase Suspend
Data retention time (Note 5)
Erase/Write cycle (Notes 3, 8, 9)
Word write time
Block erase time (2Kbyte block)
Time delay from Suspend Request until Erase Suspend
Preliminary Specifications Rev. 0.9
Specifications in this manual are tentative and subject to change.
Supply voltage
Analog supply voltage
Input
voltage
Output
voltage
Power dissipation
Operating ambient temperature
Storage temperature
occur during block erase, attempt to execute clear status register command, then block erase
P1
P8
P10
P7
P1
P8
P10
P7
5
0
0
5
0
0
, P7
, P7
0
0
to P1
to P8
to P1
to P8
to P10
to P10
Parameter
2Kbyte block
8Kbyte block
16Kbyte block
32Kbyte block
1
1
7,
3
7,
3
,P8
, P8
P6
P6
7
7
, X
, X
5
0
0
5
Parameter
Parameter
to P8
to P6
IN
to P6
OUT
to P8
, V
Renesas Technology Corp.
REF
7
7
7
7
, P9
, P7
, P7
, P9
, RESET, CNV
0
2
2
0
to P9
to P7
to P7
to P9
3
7
7
3
,
,
,
,
SS
Condition
V
V
Topr=25 C
CC
CC
=AV
=AV
CC
CC
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
10000 (Notes 4, 10)
100 (Note 4)
-20 to 85 / -40 to 85 (Note)
Min.
Min.
10
-0.3 to V
-0.3 to V
Rated Value
Standard value
Standard value
-0.3 to 6.5
-0.3 to 6.5
-0.3 to 6.5
-0.3 to 6.5
-65 to 150
300
(Note 2)
CC
CC
Typ.
0.2
0.4
0.7
1.2
+0.3
+0.3
75
(Note 2)
M16C/26 Group
Typ.
100
0.3
Max.
600
20
Max.
9
9
9
9
20
Unit
mW
V
V
V
V
V
V
C
C
Unit
cycle
Unit
cycle
year
ms
ms
µs
µs
s
s
s
s
s
171