si7872dp-t1 Vishay, si7872dp-t1 Datasheet
si7872dp-t1
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si7872dp-t1 Summary of contents
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... Bottom View Ordering Information: Si7872DP-T1 Si7872DP-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si7872DP Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Symbol Static V Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b r Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...
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... Q - Total Gate Charge (nC) g Gate Charge Document Number: 72035 S-52555-Rev. B, 30-Mar-06 New Product 1200 Si7872DP Vishay Siliconix 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... Si7872DP Vishay Siliconix MOSFET CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless noted 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product °C J 0.8 1.0 1.2 = 250 μA 75 100 125 150 100 ...
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... Document Number: 72035 S-52555-Rev. B, 30-Mar-06 New Product - Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Si7872DP Vishay Siliconix Notes Duty Cycle ...
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... Si7872DP Vishay Siliconix MOSFET CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless noted thru Drain-to-Source Voltage (V) DS Output Characteristics 0.040 0.032 0.024 0.016 0.008 0.000 Drain Current (A) D On-Resistance vs. Drain Current ...
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... Limited DS(on D(on) Limited °C C Single Pulse 0.1 BV Limited DSS 0.01 0 Drain-to-Source Voltage (V) DS Safe Operating Area, Junction-to-Foot Si7872DP Vishay Siliconix 0. 7 0.04 0.03 0.02 0.01 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 100 ...
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... Si7872DP Vishay Siliconix MOSFET CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 8 New Product - Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (sec) ...
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... Document Number: 72035 S-52555-Rev. B, 30-Mar-06 New Product 10 1 0.0 100 125 150 ˚ C) 200 160 120 80 C oss Drain-to-Source Voltage (V) DS Capacitance Si7872DP Vishay Siliconix T = 150 ° °C J 0.3 0.6 0.9 1 Forward Voltage Drop (V) F Forward Voltage Drop 24 30 www.vishay.com 1.5 9 ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...