si7872dp-t1 Vishay, si7872dp-t1 Datasheet - Page 4

• Manufacturer Part Number: si7872dp-t1
• Description: Dual N-channel 30-v D-s Mosfet With Schottky Diode
• Manufacturer: Vishay

Si7872DP
Vishay Siliconix
MOSFET CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.2
0.4
0.0
0.1
20
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
T
V
J
0
SD
= 150 °C
T
Threshold Voltage
- Source-to-Drain Voltage (V)
J
0.4
-
25
Temperature (°C)
50
0.6
I
D
= 250 μA
75
0.8
0.01
100
0.1
10
T
100
1
J
0.1
= 25 °C
r
DS(on)
1.0
125
Limited
Safe Operating Area, Junction-to-Foot
I
D(on)
Single Pulse
T
New Product
Limited
C
V
= 25 °C
150
DS
1.2
- Drain-to-Source Voltage (V)
1
BV
DSS
Limited
10
0.06
0.05
0.04
0.03
0.02
0.01
0.00
100
80
60
40
20
0
10
0
I
DM
- 3
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
100 ms
Limited
1 ms
10 ms
1 s
10 s
dc
100
2
V
10
GS
- 2
- Gate-to-Source Voltage (V)
4
Time (sec)
I
D
= 7.5 A
S-52555-Rev. B, 30-Mar-06
10
Document Number: 72035
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