si7872dp-t1 Vishay, si7872dp-t1 Datasheet - Page 2

• Manufacturer Part Number: si7872dp-t1
• Description: Dual N-channel 30-v D-s Mosfet With Schottky Diode
• Manufacturer: Vishay

Si7872DP
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
SCHOTTKY SPECIFICATIONS T
MOSFET SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery
Time
Parameter
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
a
b
b
b
b
Symbol
Symbol
V
r
I
DS(on)
t
t
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
R
Q
I
C
g
V
t
rm
t
t
SD
rr
fs
gs
gd
G
r
f
F
T
g
J
= 25 °C, unless otherwise noted
J
= 25 °C, unless otherwise noted
V
V
I
DS
D
DS
≅ 1 A, V
I
= 15 V, V
F
V
V
= 30 V, V
V
V
V
V
V
V
= 1.7 A, di/dt = 100 A/µs
V
DS
DS
DS
GS
DD
New Product
DS
DS
GS
DS
I
S
= 0 V, V
= 0 V, V
V
= V
= 1 A, V
I
= 4.5 V, I
V
= 30 V, V
= 5 V, V
= 15 V, R
= 10 V, I
= 15 V, I
F
r
GEN
r
= – 30 V, T
= 1.0 A, T
GS
= 30 V, T
GS
Test Condition
Test Condition
GS
, I
= 10 V, R
= 4.5 V, I
I
V
V
= 0 V, T
F
GS
GS
D
GS
GS
r
r
D
D
= 1.0 A
D
= 250 µA
GS
= 30 V
= 10 V
L
= ± 20 V
= ± 12 V
= 7.5 A
= 7.5 A
= 6.5 A
= 0 V
= 10 V
= 15 Ω
J
J
= 0 V
J
= 100 °C
= 125 °C
= 125 °C
J
D
G
= 85 °C
= 7.5 A
= 6 Ω
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min
Min
1.0
0.8
20
20
0.017
0.016
0.024
0.020
0.004
Typ
0.47
0.36
0.75
0.47
11.5
Typ
0.7
3.0
2.9
3.8
2.5
3.5
1.5
1.8
50
19
21
12
10
10
19
40
35
28
7
9
9
9
S-52555-Rev. B, 30-Mar-06
b
Document Number: 72035
± 100
± 100
0.022
0.022
0.030
0.028
0.100
2000
Max
0.50
0.42
Max
100
3.0
2.0
1.2
0.5
10
20
15
11
18
15
20
17
17
30
66
15
15
55
45
1
Unit
Unit
mA
nC
nA
µA
pF
ns
Ω
Ω
V
V
A
S
V