si7872dp-t1 Vishay, si7872dp-t1 Datasheet - Page 7

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si7872dp-t1

Manufacturer Part Number
si7872dp-t1
Description
Dual N-channel 30-v D-s Mosfet With Schottky Diode
Manufacturer
Vishay
Datasheet

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MOSFET CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 72035
S-52555-Rev. B, 30-Mar-06
- 0.1
- 0.2
- 0.3
- 0.4
0.1
0.4
0.3
0.2
0.1
0.0
20
10
1
0.0
- 50
- 25
T
Source-Drain Diode Forward Voltage
J
= 150 °C
0.3
V
SD
0
- Source-to-Drain Voltage (V)
T
Threshold Voltage
J
- Temperature
25
0.6
50
T
J
I
D
= 25 °C
0.9
= 250 μA
75
(°C)
0.01
100
100
0.1
10
1
0.1
1.2
r
125
DS(on)
Safe Operating Area, Junction-to-Foot
Limited
I
D(on)
Single Pulse
New Product
T
Limited
C
150
1.5
V
= 25 °C
DS
- Drain-to-Source Voltage (V)
1
BV
DSS
Limited
10
0.05
0.04
0.03
0.02
0.01
0.00
100
80
60
40
20
0
10
0
- 3
I
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
DM
100 ms
Limited
1 ms
10 ms
1 s
10 s
dc
2
100
10
V
GS
- 2
- Gate-to-Source Voltage (V)
Time (sec)
4
I
D
= 7.5 A
10
Vishay Siliconix
- 1
6
Si7872DP
www.vishay.com
1
8
10
10
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