ssm6n40tu TOSHIBA Semiconductor CORPORATION, ssm6n40tu Datasheet
ssm6n40tu
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ssm6n40tu Summary of contents
Page 1
... DSS ± GSS (Note1) 500 mW D °C T 150 ch −55~150 °C T stg SSM6N40TU Unit: mm 2.1±0.1 1.7±0 1.Source1 4.Source2 5.Gate2 2.Gate1 3.Drain2 6.Drain1 UF6 JEDEC ― JEITA ― TOSHIBA 2-2T1B Weight: 7.0mg (typ.) 2007-11-05 ...
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... GS G off = -1 DSF OUT (c) V OUT V DD Equivalent Circuit (top view SSM6N40TU Min Typ. Max ⎯ ⎯ 30 ⎯ ⎯ 15 ⎯ ⎯ 1 ⎯ ⎯ ±1 ⎯ 1.0 2.6 ⎯ (Note 2) 1.9 3.7 ⎯ (Note 2) 96 122 ⎯ ...
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... Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. requires a higher voltage than V GS (on) < V < (off SSM6N40TU = 1 mA for D and V requires a lower th GS (off (on). ...
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... Gate-source voltage V 400 Common Source Ta = 25°C 300 200 4.0 V 100 VGS = 10V − 25 ° 2.0 1.0 0 −50 150 Ambient temperature Ta (°C) 4 SSM6N40TU I – 100 °C 25 °C − 25 °C 2.0 4.0 ( – (ON Drain current I ( – ...
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... Ta =100 °C 0.01 0.001 10 0 Drain-source voltage V 1000 t off C iss t f 100 C oss C rss 100 0.01 ( SSM6N40TU I – Common Source −25 °C S –0.5 –1.0 –1.5 ( – Common Source ∼ 4 ° ...
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... Pulse width t (s) w 1000 ) t=10s 800 600 DC 400 200 0 -40 -20 100 1000 *: Total Rating 6 SSM6N40TU P – Mounted on FR4 board 2 (25.4mm × 25.4mm × 1. Pad : 645 100 120 140 160 Ambient temperature Ta (°C) 2007-11-05 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 SSM6N40TU 20070701-EN 2007-11-05 ...