ssm6n40tu TOSHIBA Semiconductor CORPORATION, ssm6n40tu Datasheet - Page 5

• Manufacturer Part Number: ssm6n40tu
• Description: Toshiba Field-effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
0.3
0.1
500
300
100
10
10
50
30
10
8
6
4
2
0
3
1
0.01
5
3
1
0.1
0
Common Source
V DS = 5 V
Ta = 25°C
Common Source
Ta = 25°C
f = 1 MHz
V GS = 0 V
Common Source
I D = 1.6A
Ta = 25°C
Drain-source voltage V
1
Total Gate Charge Qg (nC)
Dynamic Input Characteristic
VDD = 15 V
Drain current I
0.1
2
1
|Y
C – V
fs
| – I
3
DS
VDD = 24 V
D
D
10
4
1
(A)
DS
(V)
5
C oss
C rss
C iss
100
10
6
5
0.001
1000
0.01
100
0.1
10
10
1
1
0
0.01
t f
t on
t r
t off
25 °C
Drain-source voltage V
Ta =100 °C
Drain current I
–0.5
0.1
I
DR
t – I
– V
−25 °C
D
DS
–1.0
D
1
Common Source
V DD = 15 V
V GS = 0 ∼ 4.0 V
Ta = 25 °C
R G = 10 Ω
Common Source
V GS = 0 V
SSM6N40TU
DS
G
(A)
(V)
S
2007-11-05
D
I
DR
–1.5
10