ssm6n40tu TOSHIBA Semiconductor CORPORATION, ssm6n40tu Datasheet - Page 2

• Manufacturer Part Number: ssm6n40tu
• Description: Toshiba Field-effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common)
Switching Time Test Circuit
Marking
Note 2: Pulse test
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Switching time
Drain-source forward voltage
(a) Test Circuit
6
1
4 V
NN2
0
V
R
D.U. < = 1%
V
Common Source
Ta = 25°C
Characteristics
2
5
DD
IN
G
10 μs
: t
= 10 Ω
= 15 V
r
, t
f
4
3
Turn-on time
Turn-off time
< 5 ns
IN
Equivalent Circuit
V
DD
V
V
OUT
R
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
I
I
C
|Y
C
C
GSS
DSS
Q
Q
V
t
t
Q
DSF
oss
on
off
rss
iss
th
fs
gs
gd
g
|
6
1
Q1
(b) V
(c) V
I
I
V
V
V
V
I
I
V
V
V
V
V
I
D
D
D
D
D
DS
GS
DS
DS
DS
DS
GS
DD
GS
5
2
= 1 mA, V
= 1 mA, V
= 1 A, V
= 0.5 A, V
= -1.6 A, V
=30 V, V
= 5 V, I
= 5 V, I
= 15 V, V
= 15 V, I
= ±16 V, V
= 10 V
= 15 V, I
= 0~4 V, R
2
OUT
IN
Q2
4
3
Test Conditions
GS
D
D
(top view)
GS
GS
GS
GS
D
D
GS
= 1 mA
= 1A
= 10 V
GS
= 1.6 A
DS
= 0.5 A
G
= 0 V
= -20 V
= 4 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 10 Ω
= 0 V
V
DS (ON)
(Note 2)
(Note 2)
V
(Note 2)
(Note 2)
4 V
0 V
DD
Min
1.0
1.9
30
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
t
10%
on
t
r
10%
90%
Typ.
-0.8
130
180
3.7
5.1
3.9
1.2
9.5
9.0
SSM6N40TU
96
34
27
⎯
⎯
⎯
⎯
⎯
90%
t
2007-11-05
off
t
f
Max
-1.2
122
182
2.6
⎯
⎯
±1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
Unit
mΩ
μA
μA
nC
pF
ns
V
V
S
V