ssm6n40tu TOSHIBA Semiconductor CORPORATION, ssm6n40tu Datasheet - Page 3

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ssm6n40tu

Manufacturer Part Number
ssm6n40tu
Description
Toshiba Field-effect Transistor Silicon N Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
Notice on Usage
this product. For normal switching operation, V
voltage than V
Handling Precaution
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
V
Take this into consideration when using the device.
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
th
can be expressed as the voltage between gate and source when the low operating current value is I
th.
(The relationship can be established as follows: V
GS (on)
requires a higher voltage than V
3
GS (off)
< V
th
< V
GS (on).
th
and V
)
GS (off)
SSM6N40TU
requires a lower
D
2007-11-05
= 1 mA for

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