ssm3k320t TOSHIBA Semiconductor CORPORATION, ssm3k320t Datasheet

no-image

ssm3k320t

Manufacturer Part Number
ssm3k320t
Description
Toshiba Field-effect Transistor Silicon N-channel Mos Type U-mos?
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
High-Speed Switching Applications
Absolute Maximum Ratings
Marking
4.5 V drive
Low ON-resistance : R
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Note 1: The junction temperature should not exceed 150°C during use.
Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm
1
KDZ
temperature/current/voltage
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
3
Characteristic
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)
2
Semiconductor
: R
on
on
DC
Pulse
= 77 mΩ (max) (@V
= 50 mΩ (max) (@V
Reliability
Equivalent Circuit
and
I
I
P
SSM3K320T
(Ta = 25°C)
D
DP
D
Symbol
V
V
T
T
(Note1)
(Note1)
(Note 2)
GSS
DSS
stg
ch
t = 5s
the
1
GS
GS
significant
Handbook
3
= 4.5 V)
= 10 V)
−55 to 150
Rating
1400
±20
700
150
4.2
8.4
30
1
2
change
(top view)
(“Handling
Unit
mW
°C
°C
V
V
A
in
Weight: 10mg (typ.)
JEDEC
JEITA
TOSHIBA
TSM
2
)
SSM3K320T
2.8-0.3
1.6-0.1
2-3S1A
1: Gate
2: Source
3: Drain
+0.2
+0.2
2009-04-23
Unit: mm

Related parts for ssm3k320t

ssm3k320t Summary of contents

Page 1

... 1400 °C T 150 ch °C −55 to 150 T stg and the significant change Reliability Handbook (“Handling Equivalent Circuit (top view SSM3K320T +0.2 2.8-0.3 +0.2 1.6-0.1 1 2 1: Gate 2: Source TSM 3: Drain in JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight: 10mg (typ 2009-04-23 Unit: mm 3 ...

Page 2

... 4.7 Ω off = -4 DSF OUT (c) V OUT V DD requires a higher voltage than V GS (on) GS (off) 2 SSM3K320T Min Typ. Max ⎯ ⎯ 30 ⎯ ⎯ 10 ⎯ ⎯ 10 ⎯ ⎯ ±0.1 ⎯ 1.3 2.5 ⎯ (Note 3) 7.0 14.0 ⎯ (Note 3) ...

Page 3

... Gate–source voltage V 200 Common Source Ta = 25°C 100 4 V GS − 25 ° 2.5 2.0 1.5 1.0 0.5 0 150 −50 Ambient temperature Ta (°C) 3 SSM3K320T I – 100 °C 25 °C − 25 °C 1.0 2.0 3.0 4.0 5.0 ( – (ON Drain current I ( – Ta ...

Page 4

... 0.1 0. Drain–source voltage V 1000 t off t f 100 C iss 10 C oss rss 100 0.01 ( SSM3K320T I – −25 °C 100 °C 25 °C -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 ( – Common Source 10V ° 4.7 Ω ...

Page 5

... Ambient temperature Ta (°C) 5 SSM3K320T P – Mounted on FR4 Board (25.4mm × 25.4mm × 1.6mm , 2 Cu Pad : 645 Mounted on FR4 Board (25.4mm × 25.4mm × 1.6mm , 2 Cu Pad : 0.8 mm × ...

Page 6

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 SSM3K320T 2009-04-23 ...

Related keywords