ssm3k320t TOSHIBA Semiconductor CORPORATION, ssm3k320t Datasheet - Page 4

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ssm3k320t

Manufacturer Part Number
ssm3k320t
Description
Toshiba Field-effect Transistor Silicon N-channel Mos Type U-mos?
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
10
1000
0.03
0.01
8
6
4
2
0
300
100
0.3
0.1
30
10
30
10
0
3
1
0.001
0.1
Common Source
I D = 4.2A
Ta = 25°C
Common Source
V DS = 10 V
Ta = 25 °C
Common Source
Ta = 25 °C
f = 1 MHz
V GS = 0 V
Total Gate Charge Qg (nC)
Drain–source voltage V
1
Dynamic Input Characteristic
0.01
Drain current I
1
2
C – V
|Y
fs
0.1
| – I
DS
D
3
VDD=24V
D
10
DS
(A)
1
4
(V)
C iss
C oss
C rss
100
10
5
4
0.01
1000
0.1
100
10
10
1
1
0
0.01
t on
G
Common Source
V GS = 0 V
t f
t r
t off
Drain–source voltage V
S
-0.2
D
I
DR
Drain current I
100 °C
-0.4
0.1
I
DR
t – I
-0.6
– V
D
DS
Common Source
V DD = 15 V
V GS = 0 to 10V
Ta = 25 °C
R G = 4.7 Ω
-0.8
D
1
DS
25 °C
−25 °C
SSM3K320T
(A)
(V)
-1.0
2009-04-23
-1.2
10

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