ssm3k320t TOSHIBA Semiconductor CORPORATION, ssm3k320t Datasheet - Page 2

• Manufacturer Part Number: ssm3k320t
• Description: Toshiba Field-effect Transistor Silicon N-channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Switching Time Test Circuit
Handling Precaution
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Notice on Usage
this product. For normal switching operation, V
voltage than V
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
V
Take this into consideration when using the device.
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Drain-Source forward voltage
Note3: Pulse test
(a) Test Circuit
th
can be expressed as the voltage between gate and source when the low operating current value is I
10 V
0
V
R
D.U. < = 1%
V
Common Source
Ta = 25°C
th.
Characteristic
DD
IN
G
10 μs
: t
(The relationship can be established as follows: V
= 4.7 Ω
= 15 V
r
, t
f
Turn-on time
Turn-off time
< 5 ns
IN
(Ta = 25°C)
V
V
V
R
Symbol
(BR) DSS
(BR) DSX
DD
DS (ON)
⏐Y
V
OUT
I
I
C
C
C
GSS
DSS
Q
Q
V
t
t
Q
DSF
oss
on
off
rss
iss
th
fs
gs
gd
g
GS (on)
⏐
I
I
V
V
V
V
I
I
V
V
V
V
I
D
D
D
D
D
(b) V
(c) V
DS
GS
DS
DS
DS
DD
DD
GS
requires a higher voltage than V
= 10 mA, V
= 10 mA, V
= 2.1 A, V
= 2.1 A, V
= -4.2 A, V
= 30 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ± 20 V, V
= 24 V, I
= 15 V, I
= 0 to 10 V, R
2
OUT
IN
Test Conditions
GS
GS
D
D
GS
D
D
GS
GS
GS
GS
= 1 mA
= 2.1 A
= 2.1 A,
GS (off)
=4.2 A, V
DS
= 10 V
= 4.5 V
= 0 V
= 0V
= -20 V
= 0 V
= 0 V, f = 1 MHz
G
= 0 V
= 4.7 Ω
< V
V
GS
DS (ON)
th
= 10 V
10 V
V
< V
0 V
(Note 3)
(Note 3)
(Note 3)
(Note 3)
DD
GS (on).
th
and V
)
Min
1.3
7.0
30
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
t
10%
on
GS (off)
t
r
-0.90
Typ.
14.0
12.0
10%
90%
190
4.6
3.2
1.4
9.0
38
58
65
45
⎯
⎯
⎯
⎯
⎯
SSM3K320T
requires a lower
90%
t
D
2009-04-23
off
±0.1
Max
-1.2
2.5
t
10
50
77
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
= 1 mA for
f
Unit
mΩ
nC
μA
μA
pF
ns
V
V
S
V