ssm3k320t TOSHIBA Semiconductor CORPORATION, ssm3k320t Datasheet - Page 3

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ssm3k320t

Manufacturer Part Number
ssm3k320t
Description
Toshiba Field-effect Transistor Silicon N-channel Mos Type U-mos?
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
100
200
120
100
10
80
60
40
20
0
8
6
4
2
0
0
−50
0
0
Common Source
Gate–source voltage V
Drain–source voltage V
Ambient temperature Ta (°C)
0.2
0
R
10 V
DS (ON)
R
0.4
DS (ON)
I
D
6.0 V
– V
50
10
– V
DS
I D = 2.1 A / V GS = 10 V
– Ta
0.6
GS
5.0V
25 °C
I D =2.1A
Common Source
Common Source
Ta = 25 °C
GS
DS
2.1A / 4.5 V
100
0.8
V
Ta = 100 °C
(V)
4.5 V
GS
(V)
− 25 °C
= 4.0 V
150
1.0
20
3
0.001
0.01
200
100
0.1
2.5
1.0
0.5
2.0
1.5
10
0
−50
1
0
0
0
Common Source
V DS = 10 V
Common Source
Ta = 25°C
4.5 V
V
GS
= 10 V
Gate–source voltage V
Ambient temperature Ta (°C)
Ta = 100 °C
1.0
Drain current I
2
0
R
DS (ON)
2.0
I
D
V
th
– V
50
− 25 °C
4
– Ta
GS
– I
3.0
D
D
25 °C
(A)
GS
Common Source
V DS = 10 V
I D = 1 mA
SSM3K320T
100
6
4.0
(V)
2009-04-23
150
5.0
8

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