th50vsf3580aasb TOSHIBA Semiconductor CORPORATION, th50vsf3580aasb Datasheet - Page 17

• Manufacturer Part Number: th50vsf3580aasb
• Description: Sram Flash Memory Mixed Multi-chip Package
• Manufacturer: TOSHIBA Semiconductor CORPORATION

AC CHARACTERISTICS
READ CYCLE
t
t
t
t
t
t
t
t
t
t
BLOCK PROTECT
t
t
t
t
PROGRAM AND ERASE CHARACTERISTICS
t
t
t
t
*: typ.
SYMBOL
SYMBOL
SYMBOL
RC
ACC
CE
OE
CEE
OEE
OEH
OH
DF1
DF2
VPS
CESP
VPH
PPLH
PPW
PCEW
PBEW
EW
Read Cycle Time
Address Access Time
Output Data Hold Time
V
Auto-Program Time (Byte Mode)
Auto-Program Time (Word Mode)
Auto Chip Erase Time
Auto Block Erase Time
Erase/Program Cycle
CEF Access Time
OE Access Time
CEF to Output Lo-Z
OE to Output Lo-Z
OE Hold Time
CEF to Output Hi-Z
OE to Output Hi-Z
CEF Set-up Time
OE Hold Time
WE Low-Level Hold Time
ID
Set-up Time
(FLASH MEMORY)
PARAMETER
PARAMETER
PARAMETER
TH50VSF3580/3581AASB
0.7*
MIN
MIN
MIN
100
50*
10
11*
90





8*
0
0
0
0
4
4
4
5
2001-03-06 17/50
MAX
MAX
MAX
300
300
710
90
90
40
30
30
10










UNIT
UNIT
UNIT
Cyc.
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
µs
µs
s
s