th50vsf3580aasb TOSHIBA Semiconductor CORPORATION, th50vsf3580aasb Datasheet - Page 43

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th50vsf3580aasb

Manufacturer Part Number
th50vsf3580aasb
Description
Sram Flash Memory Mixed Multi-chip Package
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
TH50VSF3580AASB
Manufacturer:
TOSHIBA
Quantity:
1
Notes:
TIMING FOR SWITCHING BETWEEN FLASH AND SRAM MODES
(1)
(2)
(3)
(4)
(5)
(6)
Because I/O pins may be in Output state at this point, input signals of the opposite value must not be
If
remain High-Impedance.
If
remain High-Impedance.
If OE is High during a Write cycle, the outputs will remain High-Impedance.
applied.
D
WE remains High during a Read cycle.
OUT
CE2S
CE
CE
CE
CEF
1
S
1
1
6 stops toggling when the last command has been completed.
S
S
goes Low (or CE2S goes High) at the same time as or after WE goes Low, the outputs will
goes High (or CE2S goes Low) at the same time as or before WE goes High, the outputs will
t
CCR
TH50VSF3580/3581AASB
2001-03-06 43/50
t
CCR

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