m36l0t7060b2 STMicroelectronics, m36l0t7060b2 Datasheet

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m36l0t7060b2

Manufacturer Part Number
m36l0t7060b2
Description
128 Mbit Multiple Bank, Multilevel, Burst Flash Memory And 64 Mbit 4 Mb X16 Psram, Multichip Package
Manufacturer
STMicroelectronics
Datasheet
Features
Flash memory
April 2007
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
Multichip package
– 1 die of 128 Mbit (8 Mb x16, Multiple Bank,
– 1 die of 32 Mbit (2 Mb x16) Pseudo SRAM
Supply voltage
– V
– V
– V
Electronic signature
– Manufacturer Code: 20h
– Device Code (Top Flash Configuration)
– Device Code (Bottom Flash Configuration)
ECOPACK® packages available
Synchronous / Asynchronous Read
– Synchronous Burst Read mode: 52 MHz
– Random Access: 85 ns
Synchronous Burst Read Suspend
Programming time
– 2.5 µs typical Word program time using
Memory organization
– Multiple Bank Memory Array: 8 Mbit Banks
– Parameter Blocks (Top or Bottom location)
Dual operations
– program/erase in one Bank while read in
– No delay between read and write
Multilevel, Burst) Flash Memory
M36L0T7060T2: 88C4h
M36L0T7060B2: 88C5h
Buffer Enhanced Factory Program
command
others
operations
DDF
CCP
PPF
= 9 V for fast program
= 1.7 to 2.0 V
= V
DDQ
128 Mbit (Multiple Bank, Multilevel, Burst) Flash memory
= 2.7 to 3.5 V
and 64 Mbit (4 Mb x16) PSRAM, multichip package
Rev 1
PSRAM
Block locking
– All blocks locked at power-up
– Any combination of blocks can be locked
– WP for Block Lock-Down
– Absolute Write Protection with V
Security
– 64 bit unique device number
– 2112 bit user programmable OTP Cells
Common Flash Interface (CFI)
100,000 program/erase cycles per block
Access time: 65 ns
Low standby current: 90 µA (T
Deep Power-Down current: 10 µA
Byte control: UB
Compatible with standard LPSRAM
Power-Down modes
– Deep Power-Down
with zero latency
M36L0T7060B2
TFBGA88 (ZAQ)
M36L0T7060T2
P
/LB
8 × 10 mm
P
FBGA
A
Preliminary Data
40°C)
PP
www.st.com
= V
SS
1/22
1

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m36l0t7060b2 Summary of contents

Page 1

... PPF ■ Electronic signature – Manufacturer Code: 20h – Device Code (Top Flash Configuration) M36L0T7060T2: 88C4h – Device Code (Bottom Flash Configuration) M36L0T7060B2: 88C5h ■ ECOPACK® packages available Flash memory ■ Synchronous / Asynchronous Read – Synchronous Burst Read mode: 52 MHz – ...

Page 2

... DDF 2.18 V supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 CCP 2.19 V supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 DDQ 2.20 V Program supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 PPF 2.21 V ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4 Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/ M36L0T7060T2, M36L0T7060B2 ...

Page 3

... M36L0T7060T2, M36L0T7060B2 7 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Contents 3/22 ...

Page 4

... List of tables Table 1. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Table 2. Operating modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Table 3. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Table 4. Operating and AC measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Table 5. Device capacitance Table 6. Stacked TFBGA88 8x10 mm - 8x10 active ball array, 0.8 mm pitch, package data Table 7. Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Table 8. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4/22 M36L0T7060T2, M36L0T7060B2 ...

Page 5

... M36L0T7060T2, M36L0T7060B2 List of figures Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 2. TFBGA connections (top view through package Figure 3. Functional block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Figure 4. AC measurement I/O waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Figure 5. AC measurement load circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Figure 6. Stacked TFBGA88 8x10 mm - 8x10 active ball array, 0.8 mm pitch, bottom view outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 List of figures ...

Page 6

... Description 1 Description The M36L0T7060T2 and M36L0T7060B2 combine two memory devices in a multichip package: ● a 128-Mbit, Multiple Bank, Multilevel, Burst, Flash memory, the M58LT128HT or M58LT128HB ● a 64-Mbit PseudoSRAM, the M69KW096B. The purpose of this document is to describe how the two memory components operate with respect to each other ...

Page 7

... M36L0T7060T2, M36L0T7060B2 Table 1. Signal names (1) A0-A22 DQ0-DQ15 V DDF V DDQ V PPF CCP NC DU Flash memory signals WAIT F PSRAM signals A22 is not connected to the PSRAM component. Address Inputs Common Data Input/Output ...

Page 8

... DQ8 DQ2 DQ10 DQ5 DQ0 DQ1 DQ3 DQ12 G F DQ9 DQ11 DQ4 CCP DDQ V DDF M36L0T7060T2, M36L0T7060B2 A21 A11 K F A22 A12 A13 A20 A10 A15 A8 A14 A16 DQ13 WAIT F NC ...

Page 9

... M36L0T7060T2, M36L0T7060B2 2 Signal descriptions See Figure 1: Logic diagram connected to this device. 2.1 Address inputs (A0-A22) Addresses A0-A21 are common inputs for the Flash memory and the PSRAM components. The other line (A22 input for the Flash memory component only. The Address Inputs select the cells in the memory array to access during Bus Read operations ...

Page 10

... It can be configured to be active during the wait cycle or one clock IL signal is not gated by Output Enable activates the memory state machine, address and M36L0T7060T2, M36L0T7060B2 , Lock-Down is disabled IH , the IL . Latch the same time ...

Page 11

... M36L0T7060T2, M36L0T7060B2 2.12 PSRAM Chip Enable input (E2 The Chip Enable, E2 This is the lowest power mode. 2.13 PSRAM Write Enable (W The Write Enable, W 2.14 PSRAM Output Enable (G The Output Enable, G cycles to be achieved with the common I/O data bus. 2.15 PSRAM Upper Byte Enable (UB The Upper Byte Enable, UB DQ15 from the upper part of the selected address during a Write or Read operation ...

Page 12

... In this condition V PPH decoupled with a 0.1 µF ceramic capacitor close to the pin PPF circuit. The PCB track widths should be program and erase currents. PPF M36L0T7060T2, M36L0T7060B2 ) V is seen as a control input. In this PPF PPF ) and the DDF ...

Page 13

... M36L0T7060T2, M36L0T7060B2 3 Functional description The PSRAM and Flash memory components have separate power supplies but share the same grounds. They are distinguished by three Chip Enable inputs: E memory and E1 P Recommended operating conditions do not allow more than one device to be active at a time. The most common example is simultaneous read operations in the Flash memory and the PSRAM which would result in a data bus contention ...

Page 14

... but must valid before the read or write operation. Controlled Write timing), or cycle time of the previous operation cycle is satisfied. P M36L0T7060T2, M36L0T7060B2 DQ0 A21 DQ7 Data Out Hi ...

Page 15

... M36L0T7060T2, M36L0T7060B2 4 Maximum rating Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied ...

Page 16

... Input and Output Timing Ref. Voltages Figure 4. AC measurement I/O waveform 16/22 conditions. Designers should check that the Flash memories Min 1.7 – 2.7 8.5 –0.4 – DDQ 0V M36L0T7060T2, M36L0T7060B2 PSRAM Max Min Max 2.0 – – – 2.7 3.5 3.5 – – 9.5 – – V +0.4 – – DDQ 85 – ...

Page 17

... M36L0T7060T2, M36L0T7060B2 Figure 5. AC measurement load circuit Table 5. Device capacitance Symbol C Input Capacitance IN C Output Capacitance OUT 1. Sampled only, not 100% tested. Please refer to the M58LT128HTB and M69KW096B datasheets for further DC and AC characteristic values and illustrations DDF DDQ DEVICE UNDER TEST 0.1µ ...

Page 18

... The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK trademark. ECOPACK specifications are available at: www.st.com. Figure 6. Stacked TFBGA88 8x10 mm - 8x10 active ball array, 0.8 mm pitch, bottom view outline Drawing is not to scale. 18/ BALL "A1" FE FE1 M36L0T7060T2, M36L0T7060B2 e b ddd A2 A1 BGA-Z42 ...

Page 19

... M36L0T7060T2, M36L0T7060B2 Table 6. Stacked TFBGA88 8x10 mm - 8x10 active ball array, 0.8 mm pitch, package data Symbol ddd E 10.000 FE1 SD SE millimeters Typ Min Max 1.200 0.200 0.850 0.350 0.300 0.400 8.000 7.900 8.100 5.600 0.100 9.900 10.100 7.200 8 ...

Page 20

... Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available options (Speed, Package, etc.) or for further information on any aspect of this device, please contact the STMicroelectronics Sales Office nearest to you. 20/22 M36 2.7 to 3.5 V DDQ CCP M36L0T7060T2, M36L0T7060B2 ZAQ F ...

Page 21

... M36L0T7060T2, M36L0T7060B2 8 Revision history Table 8. Document revision history Date 30-May-2006 20-Apr-2007 Revision 0.1 Initial release. Document status changed from Target Specification to Preliminary Data. 1 Updated DDF CCP Section 2.7: Flash Reset (RP Revision history Changes and V voltage ranges. DDQ ) updated. F 21/22 ...

Page 22

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 22/22 Please Read Carefully: © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com M36L0T7060T2, M36L0T7060B2 ...

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