m36l0t7060b2 STMicroelectronics, m36l0t7060b2 Datasheet - Page 12

• Manufacturer Part Number: m36l0t7060b2
• Description: 128 Mbit Multiple Bank, Multilevel, Burst Flash Memory And 64 Mbit 4 Mb X16 Psram, Multichip Package
• Manufacturer: STMicroelectronics

Signal descriptions
2.20
2.21
Note:
12/22
V
V
selected by the voltage range applied to the pin.
If V
case a voltage lower than V
while V
relevant values). V
its value after the operation has started does not have any effect and Program or Erase
operations continue.
If V
stable until the Program/Erase algorithm is completed.
V
V
I/O Buffers) and PSRAM chips.
The Flash memory device in a system should have their supply voltage (V
program supply voltage V
(high frequency, inherently low inductance capacitors should be as close as possible to the
package). See
sufficient to carry the required V
PPF
SS
PPF
SS
PPF
PPF
is the common ground reference for all voltage measurements in the Flash (core and
is both a Flash control input and a Flash power supply pin. The two functions are
ground
PPF
is kept in a low voltage range (0V to V
is in the range of V
Program supply voltage
> V
PP1
Figure 5: AC measurement load
PPF
enables these functions (see the M58LT128HTB datasheet for the
is only sampled at the beginning of a Program or Erase; a change in
PPF
PPH
PPLKF
decoupled with a 0.1 µF ceramic capacitor close to the pin
it acts as a power supply pin. In this condition V
PPF
gives an absolute protection against Program or Erase,
program and erase currents.
DDQ
circuit. The PCB track widths should be
) V
PPF
is seen as a control input. In this
M36L0T7060T2, M36L0T7060B2
DDF
) and the
PPF
must be