k4t51043qb-gce6 Samsung Semiconductor, Inc., k4t51043qb-gce6 Datasheet - Page 21

• Manufacturer Part Number: k4t51043qb-gce6
• Description: 512mb B-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

512Mb B-die DDR2 SDRAM
Power and ground clamps are implemented on the following input only pins:
1. BA0-BA2
2. A0-A15
3. RAS
4. CAS
5. WE
6. CS
7. ODT
8. CKE
V-I Characteristics for input only pins with clamps
Voltage across
clamp(V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
Clamp Current (mA)
Minimum Power
11.0
13.5
16.0
18.2
21.0
0.1
1.0
2.5
4.7
6.8
9.1
0
0
0
0
0
0
0
0
Minimum Ground
Clamp Current (mA)
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11.0
13.5
16.0
18.2
21.0
0.1
1.0
2.5
4.7
6.8
9.1
0
0
0
0
0
0
0
0
Rev. 0.91 (Sep. 2003)
DDR2 SDRAM
Preliminary