mt16htf25664ay-80e Micron Semiconductor Products, mt16htf25664ay-80e Datasheet - Page 11

• Manufacturer Part Number: mt16htf25664ay-80e
• Description: 512mb, 1gb, 2gb, 4gb X64, Dr 240-pin Ddr2 Sdram Udimm
• Manufacturer: Micron Semiconductor Products

Table 13:
PDF: 09005aef80f09084/Source: 09005aef80f09068
HTF16C64_128_256x64A.fm - Rev. F 8/07 EN
Parameter/Condition
Operating one bank active-precharge current:
t
bus inputs are switching; Data bus inputs are switching
Operating one bank active-read-precharge current: I
CL = CL (I
t
inputs are switching; Data pattern is same as I
Precharge power-down current: All device banks idle;
LOW; Other control and address bus inputs are stable; Data bus inputs are floating
Precharge quiet standby current: All device banks idle;
HIGH, S# is HIGH; Other control and address bus inputs are stable; Data bus inputs
are floating
Precharge standby current: All device banks idle;
S# is HIGH; Other control and address bus inputs are switching; Data bus inputs are
switching
Active power-down current: All device banks open;
t
are stable; Data bus inputs are floating
Active standby current: All device banks open;
t
commands; Other control and address bus inputs are switching; Data bus inputs
are switching
Operating burst write current: All device banks open; Continuous burst writes;
BL = 4, CL = CL (I
t
inputs are switching; Data bus inputs are switching
Operating burst read current: All device banks open; Continuous burst reads;
I
t
inputs are switching; Data bus inputs are switching
Burst refresh current:
interval; CKE is HIGH, S# is HIGH between valid commands; Other control and
address bus inputs are switching; Data bus inputs are switching
Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and address
bus inputs are floating; Data bus inputs are floating
Operating bank interleave read current: All device banks interleaving reads;
I
t
S# is HIGH between valid commands; Address bus inputs are stable during
deselects; Data bus inputs are switching
OUT
OUT
RAS =
RCD =
CK =
RAS =
RP =
RP =
CK =
= 0mA; BL = 4, CL = CL (I
= 0mA; BL = 4, CL = CL (I
t
t
t
t
RP (I
RP (I
CK (I
CK (I
t
t
t
RAS MIN (I
RAS MAX (I
RCD (I
DD
DD
DD
DD
DD
), AL = 0;
); CKE is HIGH, S# is HIGH between valid commands; Address bus
); CKE is HIGH, S# is HIGH between valid commands; Address bus
DDR2 I
Values are shown for the MT47H128M8 DDR2 SDRAM only and are computed from values specified in the
1Gb (128 Meg x 8) component data sheet
); CKE is LOW; Other control and address bus inputs
),
DD
t
RC =
DD
); CKE is HIGH, S# is HIGH between valid commands; Address bus
DD
Notes:
), AL = 0;
DD
); CKE is HIGH, S# is HIGH between valid commands; Address
t
t
),
CK =
DD
RC (I
t
RP =
t
CK =
Specifications and Conditions (Die Revision A) – 2GB
DD
t
CK (I
1. Value calculated as one module rank in this operating condition; all other module ranks in
2. Value calculated reflects all module ranks in this operating condition.
t
DD
DD
CK =
),
t
RP (I
t
CK (I
t
I
), AL = 0;
), AL =
RRD =
DD
DD
2P (CKE LOW) mode.
t
DD
),
CK (I
512MB, 1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 SDRAM UDIMM
DD
t
); CKE is HIGH, S# is HIGH between valid
RC =
); REFRESH command at every
t
t
RRD (I
RCD (I
DD
t
CK =
),
t
RC (I
t
RAS =
DD
DD
DD
t
CK (I
) - 1 ×
),
DD
4W
t
t
RCD =
),
CK =
t
t
RAS MAX (I
CK =
t
DD
t
RAS =
CK =
t
),
CK (I
t
CK (I
t
t
t
RAS =
t
RCD (I
OUT
CK (I
CK =
t
t
CK (I
t
DD
CK =
11
RAS MIN (I
DD
);
= 0mA; BL = 4,
DD
DD
t
),
DD
t
DD
CK (I
RAS MAX (I
t
),
CK (I
),
); CKE is HIGH,
); CKE is HIGH,
Fast PDN exit
MR[12] = 0
Slow PDN exit
MR[12] = 1
t
RC =
t
DD
RFC (I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
DD
); CKE is
); CKE is
t
),
RC (I
DD
DD
)
DD
),
),
Symbol -667
I
I
I
I
I
I
I
DD
DD
DD
DD
I
I
DD
DD
DD
I
I
I
DD
DD
DD
DD
DD
4W
2Q
2N
3N
2P
3P
4R
0
1
5
6
7
Electrical Specifications
1
1
2
2
1
2
2
1
2
2
2
1
1,120
1,336 1,176
1,336 1,216
4,160 4,000 3,520
2,456 2,376 2,136
776
856
112
880
960
720
288
112
©2003 Micron Technology, Inc. All rights reserved.
-53E
696
816
112
656
720
720
288
960
112
-40E Units
616
696
112
560
640
560
288
720
936
936
112
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA