mt16htf25664ay-80e Micron Semiconductor Products, mt16htf25664ay-80e Datasheet - Page 17

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mt16htf25664ay-80e

Manufacturer Part Number
mt16htf25664ay-80e
Description
512mb, 1gb, 2gb, 4gb X64, Dr 240-pin Ddr2 Sdram Udimm
Manufacturer
Micron Semiconductor Products
Datasheet
Table 18:
PDF: 09005aef80f09084/Source: 09005aef80f09068
HTF16C64_128_256x64A.fm - Rev. F 8/07 EN
Byte
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
Description
SDRAM cycle time,
SDRAM access from CK,
MIN row precharge time,
MIN row active-to-row active,
MIN RAS#-to-CAS# delay,
MIN active-to-precharge time,
Module rank density
Address and command setup time,
Address and command hold time,
Data/data mask input setup time,
Data/data mask input hold time,
Write recovery time,
WRITE-to-READ command delay,
READ-to-PRECHARGE command delay,
Memory analysis probe
Serial Presence-Detect Matrix (continued)
t
CK, MAX CL - 2
t
WR
t
AC, MAX CL - 2
512MB, 1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 SDRAM UDIMM
t
t
RCD
RP
t
t
RRD
RAS
t
t
DH
WTR
t
t
DS
IH
t
IS
b
b
b
b
t
RTP
Entry (Version)
256MB, 512MB,
-80E/-667/-53E
17
-80E/-800
-53E/-40E
-80E/-800
-53E/-40E
-800/-667
-53E/-40E
-800/-667
-53E/-40E
-80E/-800
-667/-53E
1GB, 2GB
-80E/-800
-80E/-800
-80E/-800
-667/-53E
-80E/-800
-800/-40E
-1GA
-1GA
-1GA
-1GA
-1GA
-1GA
-1GA
-1GA
-1GA
-1GA
-667
-667
-80E
-80E
-40E
-667
-53E
-40E
-667
-53E
-40E
-40E
-667
-53E
-40E
Micron Technology, Inc., reserves the right to change products or specifications without notice.
–/1E/1E
512MB
–/3C
–/3C
–/28
2D
3C
3C
3C
50
00
45
00
1E
28
40
20
25
35
27
37
47
10
15
17
22
27
1E
00
00/3D
00/40
1GB
2D
2D
3C
3C
3C
3C
3C
50
00
45
00
32
1E
32
28
80
17
20
25
35
25
27
37
47
05
10
15
12
17
22
27
1E
28
1E
00
Serial Presence-Detect
©2003 Micron Technology, Inc. All rights reserved.
00/3D
00/40
2GB
2D
2D
3C
3C
3C
3C
2d
3C
30
50
00
35
45
00
34
32
1E
34
32
28
01
12
17
20
25
35
20
25
27
37
47
00
05
10
15
07
12
17
22
27
1E
1E
28
1E
00
–/1E/1E
–/3C
3C/–
–/3C
3C/–
4GB
00/–
00/–
2D
3C
50
45
1E
02
20
25
27
37
10
17
22
1E
00

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