k9f1g08r0a Samsung Semiconductor, Inc., k9f1g08r0a Datasheet - Page 37

• Manufacturer Part Number: k9f1g08r0a
• Description: 128m X 8 Bit / 256m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F1G08R0A
K9F1G08U0A
Figure 18. Serial Access Cycle after Read
For the EDO mode, the device should hold the data on the system memory bus until the beginning of the next cycle, so that controller
could fetch the data at the falling edge. However NAND flash dosen’t support the EDO mode exactly.
The device stops the data input into the I/O bus after RE rising edge. But since the previous data remains in the I/O bus, the flow of I/
O data seems like Figure 18 and the system can access serially the data with EDO mode. tRLOH which is the parameter for fetching
data at RE falling time is necessary. Its appropriate value can be obtained with the reference chart as shown in Figure 19. The tRHOH
value depands on output load(C
Extended Data Out Mode
I/Ox
CE
RE
R/B
x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x
V
CC
GND
I/O Drive
K9K2G08U1A
t
RR
Device
NOTES : Transition is measured at 200mV from steady state voltage with load.
L
t
RP
) and I/O bus Pull-up resistor (Rp).
t
t
REA
CEA
t
RC
This parameter is sampled and not 100% tested.
t
REH
tRLOH / tRHOH value guidance
tRHOH = C
tRLOH(min, 3.3V part) = tRHOH - tREH
Figure 19. Rp vs tRHOH vs C
Rp
t
RHOH
Dout
t
RLOH
C
L
t
L
REA
* V
OL
(EDO Type, CLE=L, WE=H, ALE=L)
x x x x
x x x x
x x x x
x x x x
x x x x
x x x x
* Rp / Vcc
37
tRHOH
600n
500n
400n
300n
200n
100n
50n
18
@ Vcc = 3.3V, Ta = 25
180
36
360
30p
L
600
300
60
50p
FLASH MEMORY
30
Rp = 100k
x x x x
x x x x
x x x x
x x x x
x x x x
x x x x
425
85
70p
C
42
t
RHOH
Dout
100p
600
120
60
Rp = 50k
Rp = 10k
Rp = 5k
C
L
(F)