hx6256 Honeywell International's Solid State Electronics Center (SSEC), hx6256 Datasheet - Page 3

• Manufacturer Part Number: hx6256
• Description: 32k X 8 Static Ram Solid State Electronics Center
• Manufacturer: Honeywell International's Solid State Electronics Center (SSEC)

HX6256
RADIATION CHARACTERISTICS
Total Ionizing Radiation Dose
The SRAM will meet all stated functional and electrical
specifications over the entire operating temperature
range after the specified total ionizing radiation dose. All
electrical and timing performance parameters will remain
within specifications after rebound at VDD = 5.5 V and T
=125°C extrapolated to ten years of operation. Total
dose hardness is assured by wafer level testing of
process monitor transistors and RAM product using 10
KeV X-ray and Co60 radiation sources. Transistor gate
threshold shift correlations have been made between 10
KeV
rad(SiO2)/min at T = 25°C and gamma rays (Cobalt 60
source) to ensure that wafer level X-ray testing is
consistent
environments.
Transient Pulse Ionizing Radiation
The SRAM is capable of writing, reading, and retaining
stored data during and after exposure to a transient
ionizing radiation pulse up to the transient dose rate
upset specification, when applied under recommended
operating conditions. To ensure validity of all specified
performance parameters before, during, and after
radiation (timing degradation during transient pulse
radiation is ^10%), it is suggested that stiffening
capacitance be placed on or near the package VDD and
VSS, with a maximum inductance between the package
(chip) and stiffening capacitance of 0.7 nH per part. If
there are no operate-through or valid stored data
requirements, typical circuit board mounted de-coupling
capacitors are recommended.
RADIATION HARDNESS RATINGS (1)
(1) Device will not latch up due to any of the specified radiation exposure conditions.
(2) Operating conditions (unless otherwise specified): VDD=4.5 V to 5.5 V, T
(3) Not guaranteed with 28–Lead DIP.
www.honeywell.com/radhard
Total Dose
Transient Dose Rate Upset (3)
Transient Dose Rate Survivability (3)
Soft Error Rate (SER)
Neutron Fluence
X-rays
with
Parameter
applied
standard
at
a
military
dose
rate
radiation
Limits (2)
<1x10
_1x10
_1x10
_1x10
_1x10
of
-10
11
14
6
9
1x10
test
5
upsets/bit-day
rad(SiO
rad(Si)/s
rad(Si)/s
N/cm
Units
The SRAM will meet any functional or electrical
specification after exposure to a radiation pulse up to the
transient dose rate survivability specification, when
applied under recommended operating conditions. Note
that the current conducted during the pulse by the RAM
inputs, outputs, and power supply may significantly
exceed the normal operating levels. The application
design must accommodate these effects.
Neutron Radiation
The
specification after exposure to the specified neutron
fluence under recommended operating or storage
conditions. This assumes equivalent neutron energy of 1
MeV.
Soft Error Rate
The SRAM is immune to Single Event Upsets (SEU’s) to
the
recommended operating conditions. This hardness level
is defined by the Adams 90% worst case cosmic ray
environment for geosynchronous orbits.
Latchup
The SRAM will not latch up due to any of the above
radiation exposure conditions when applied under
recommended operating conditions. Fabrication with the
SOI substrate material provides oxide isolation between
adjacent PMOS and NMOS transistors and eliminates
any
transistor body tie connections to the p- and n-channel
substrates are made to ensure no source/drain
snapback occurs.
2
2
)
A
=-55°C to 125°C.
SRAM
specified
potential
T
Pulse width ^ µs
Pulse width ^50 ns, X-ray, VDD=6.0V, T
T
1 MeV equivalent energy, Unbiased, T
A
A
=25°C
=25°C, Adams 90% worst case environment
will
SCR
Soft
meet
Test Conditions
latchup
Error
any
Rate
functional
structures.
(SER),
or
A
=25°C
Sufficient
A
=25°C
timing
under
3