tpc8026 TOSHIBA Semiconductor CORPORATION, tpc8026 Datasheet

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tpc8026

Manufacturer Part Number
tpc8026
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications
Absolute Maximum Ratings
Small footprint due to small and thin package
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation
Drain power dissipation
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
Note 1, Note 2, Note 3 and Note 4: See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
(Note 2a) (Note 4)
GS
DC
Pulse (Note 1)
= 20 kΩ)
DSS
th
(Note 2a)
(Note 2b)
= 1.3 to 2.5 V (V
(t = 10 s)
(t = 10 s)
(Note 1)
(Note 3)
= 10 μA (max) (V
DS (ON)
(Ta = 25°C)
Symbol
V
V
V
fs
E
E
T
I
I
T
P
P
DGR
GSS
DSS
I
DP
AR
| = 30 S (typ.)
AS
AR
stg
D
ch
D
D
TPC8026
DS
= 5.1 mΩ (typ.)
DS
= 10 V, I
= 30 V)
−55 to 150
Rating
0.048
±20
150
D
1.9
1.0
30
30
13
52
44
13
1
= 1 mA)
Unit
mJ
mJ
°C
°C
W
W
V
V
V
A
A
Weight: 0.08 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
8
1
7
2
2-6J1B
6
3
2007-02-15
TPC8026
5
4
Unit: mm

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tpc8026 Summary of contents

Page 1

... V DGR ± GSS 1 1 0.048 150 °C ch −55 to 150 T °C stg 1 TPC8026 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.08 g (typ.) Circuit Configuration 2007-02-15 ...

Page 2

... Year of manufacture (The last digit of a year) Symbol Max Unit R 65.8 °C/W th (ch-a) (Note 2a) R 125 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm TPC8026 FR-4 25.4 × 25.4 × 0.8 (unit: mm) (b) 2007-02-15 ...

Page 3

... Q g ∼ − gs1 Q gd (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPC8026 Min Typ. Max = 0 V ⎯ ⎯ ± 100 = 0 V ⎯ ⎯ 10 ⎯ ⎯ 30 ⎯ ⎯ 10 ⎯ 1.3 2.5 ⎯ 7.5 10 ⎯ 5.1 6.6 ⎯ ...

Page 4

... 0.2 (V) Drain-source voltage V 0.20 0.16 0.12 0.08 0. Gate − source voltage V (V) 100 Common source Ta = 25°C Pulse test 10 1 100 0.1 4 TPC8026 I – 3.8 Common source Ta = 25°C 4.5 Pulse test 3 3.4 3.3 3.2 3 0.4 0.6 0 – Common source Ta = 25° ...

Page 5

... Common source 0 1mA Pulse test 0 −80 −40 100 (V) Ambient temperature 160 ° 5 TPC8026 I – Common source Ta = 25°C Pulse test 4 −0.4 −0.6 −0.8 −1.0 ( – 120 ...

Page 6

... I D max (Pulse Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. V DSS max 0.1 0 Drain − source voltage V (V) DS − Single pulse 0 Pulse width t (s) w 100 6 TPC8026 (2) (1) 100 1000 2007-02-15 ...

Page 7

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPC8026 20070701-EN 2007-02-15 ...

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