tpc8026 TOSHIBA Semiconductor CORPORATION, tpc8026 Datasheet - Page 4

• Manufacturer Part Number: tpc8026
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
100
0.1
50
40
30
20
10
50
40
30
20
10
10
0
0
1
0.1
0
0
Common source
V DS = 10 V
Pulse test
10
Drain − source voltage V
Gate − source voltage V
1
6
0.4
4.5
Drain current I
8
1
2
Ta = −55°C
100°C
0.8
I
I
|Y
D
D
fs
– V
– V
| – I
3
100
DS
GS
D
1.2
Ta = −55°C
D
10
4
4
25°C
25
GS
(A)
DS
Common source
V DS = 10 V
Pulse test
Common source
Ta = 25°C
Pulse test
1.6
V GS = 3 V
(V)
(V)
5
3.8
3.4
3.3
3.2
3.6
100
2
6
3.1
4
0.20
0.16
0.12
0.08
0.04
100
20
16
12
10
8
4
0
0
1
0.1
0
0
Common source
Ta = 25°C
Pulse test
10
Drain-source voltage V
Gate − source voltage V
0.2
2
4
8
Drain current I
6
4.5
3.8
1
R
0.4
V
DS (ON)
4
I
DS
D
V GS = 10 V
– V
– V
4.5
DS
GS
– I
0.6
6
D
3.6
D
6.5
3
10
GS
DS
(A)
I D = 13 A
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
0.8
8
(V)
V GS = 3 V
(V)
2007-02-15
TPC8026
3.4
3.3
3.2
3.1
100
10
1