tpc8026 TOSHIBA Semiconductor CORPORATION, tpc8026 Datasheet - Page 3

• Manufacturer Part Number: tpc8026
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Drain reverse current
Forward voltage (diode)
Characteristics
Characteristics
Rise time
Turn-ON time
Fall time
Turn-OFF time
Pulse
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
I
I
C
I
C
|Y
C
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
on
off
gs1
t
t
iss
rss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
Duty < = 1%, t
V
I
D
D
DR
V
GS
DS
DS
GS
GS
DS
DS
DD
= 10 mA, V
= 10 mA, V
GS
3
= 13 A, V
(Ta = 25°C)
= ± 20 V, V
= 30 V, V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 10 V, I
= 10 V, V
∼ − 24 V, V
10 V
0 V
Test Condition
Test Condition
w
D
D
D
GS
GS
GS
D
GS
GS
= 10 μ s
GS
= 1 mA
= 6.5 A
DS
= 6.5 A
= 6.5 A
⎯
= 0 V
= 0 V
= − 20 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
= 0 V
I
D
V
DD
= 6.5 A
∼ − 15 V
D
= 13 A
V
OUT
Min
Min
1.3
30
10
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
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⎯
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⎯
1800
Typ.
Typ.
370
570
7.5
5.1
6.5
30
15
28
21
54
42
14
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2007-02-15
TPC8026
± 100
− 1.2
Max
Max
2.5
6.6
10
10
52
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
m Ω
nC
nA
μ A
pF
ns
V
V
S
A
V