tpc8026 TOSHIBA Semiconductor CORPORATION, tpc8026 Datasheet - Page 5

• Manufacturer Part Number: tpc8026
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
1.6
1.2
0.8
0.4
16
12
−80
8
4
0
2
0
0.1
0
Common source
Pulse test
(2)
(1)
V GS = 4.5 V
V GS = 10 V
−40
Drain − source voltage V
Ambient temperature Ta (
Ambient temperature Ta (
40
Capacitance – V
0
1
(1)Device mounted on a glass-epoxyboard
(a)(Note 2a)
(2)Device mounted on a glass-epoxyboard
(b)(Note 2b)
t = 10 s
R
DS (ON)
P
D
40
80
– Ta
I D = 3,6.5,13 A
– Ta
80
10
DS
C rss
I D = 3,6.5,13 A
DS
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
120
C iss
°
C oss
°
C)
(V)
C)
120
160
100
160
5
1000
100
0.1
2.5
1.5
0.5
10
50
40
30
20
10
−80
1
3
2
1
0
0
0
0
Common source
V DS = 10 V
I D = 1mA
Pulse test
V DS
10
10
Drain − source voltage V
−40
Ambient temperature Ta (
−0.2
Total gate charge Q
Dynamic input/output
20
0
3
4.5
characteristics
V DD = 6V
−0.4
I
DR
30
V
th
– V
40
– Ta
1
V GS
DS
40
−0.6
24
80
g
Common source
I D = 13 A
Ta = 25°C
Pulse test
DS
50
12
Common source
Ta = 25°C
Pulse test
(nC)
V GS = 0 V
−0.8
°
(V)
120
C)
60
2007-02-15
TPC8026
−1.0
160
70
20
16
12
8
4
0