CM200DU-12NFH_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM200DU-12NFH_09 Datasheet - Page 3

• Manufacturer Part Number: CM200DU-12NFH_09
• Description: IGBT MODULES HIGH POWER SWITCHING USE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

PERFORMANCE CURVES
10
400
350
300
250
200
150
100
10
10
10
4.5
3.5
2.5
1.5
0.5
50
–1
10
0
COLLECTOR-EMITTER VOLTAGE V
5
4
3
2
1
0
COLLECTOR-EMITTER VOLTAGE V
7
5
3
2
7
5
3
2
7
5
3
2
2
1
0
6
0
COLLECTOR-EMITTER SATURATION
–1
V
GATE-EMITTER VOLTAGE V
0.5
GE
2
VOLTAGE CHARACTERISTICS
OUTPUT CHARACTERISTICS
8
3 5 7
= 0V
V
1 1.5
GE
20V
CAPACITANCE–V
CHARACTERISTICS
10
15
=
13
10
(TYPICAL)
(TYPICAL)
(TYPICAL)
0
2
11
12
2
2.5
3 5 7
7
7.5
8.5
14
3
10
8
10
9
9.5
3.5
16
1
CE
T
I
I
I
T
C
C
2
C
j
C
C
C
j
4
= 25°C
= 400A
= 200A
= 80A
= 25°C
GE
3 5 7
oes
ies
res
18
4.5
(V)
CE
CE
20
10
(V)
(V)
5
2
3
10
10
10
10
10
10
2.5
1.5
0.5
EMITTER-COLLECTOR VOLTAGE V
3
2
1
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
3
2
1
10
0
0
COLLECTOR-EMITTER SATURATION
1
V
SWITCHING CHARACTERISTICS
GE
FORWARD CHARACTERISTICS
VOLTAGE CHARACTERISTICS
50 100 150 200 250 300 350 400
COLLECTOR CURRENT I
COLLECTOR CURRENT I
0.5
2
= 15V
FREE-WHEEL DIODE
3
HIGH POWER SWITCHING USE
HALF-BRIDGE
1
MITSUBISHI IGBT MODULES
5 7
(TYPICAL)
(TYPICAL)
(TYPICAL)
CM200DU-12NFH
10
1.5
2
Conditions:
V
V
R
T
Inductive load
2
2
CC
GE
j
t
t
t
t
G
d(off)
d(on)
f
r
= 125°C
T
T
T
T
= 6.3Ω
3
j
j
j
j
= 300V
= ±15V
= 25°C
= 125°C
= 25°C
= 125°C
C
C
2.5
(A)
(A)
5 7
EC
10
(V)
3
3
Feb. 2009