CM200DU-12NFH_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM200DU-12NFH_09 Datasheet - Page 2

• Manufacturer Part Number: CM200DU-12NFH_09
• Description: IGBT MODULES HIGH POWER SWITCHING USE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

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Note 1. I
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
V
V
I
I
I
I
P
P
T
T
V
I
V
I
V
C
C
C
Q
t
t
t
t
t
Q
V
R
R
R
R
R
1 : Case temperature (T
2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
3 : If you use this value, R
4 : Case temperature (T
C
CM
E
EM (Note 1)
CES
GES
d(on)
r
d(off)
f
rr
Symbol
Symbol
j
stg
CES
GES
C (Note 3)
C
iso
GE(th)
CE(sat)
ies
oes
res
EC(Note 1)
th(j-c)
th(j-c)
th(c-f)
th(j-c’)
G
G
rr (Note 1)
’
(Note 1)
(Note 3)
—
—
—
(Note 1)
2. Pulse width and repetition rate should be such that the device junction temperature (T
3. Junction temperature (T
4. No short circuit capability is designed.
Q
R
E
Q
, V
EC
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance
Contact thermal resistance
Thermal resistance
External gate resistance
, t
rr
& Q
rr
represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
C
C
Parameter
Parameter
) measured point is shown in page OUTLINE DRAWING.
’) measured point is just under the chips.
th(f-a)
(Tj = 25
should be measured just under the chips.
j
) should not increase beyond 150°C.
*1
°
C, unless otherwise specified)
(Tj = 25
G-E Short
C-E Short
Operation
Pulse
Operation
Pulse
T
T
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M6 screw
Typical value
V
I
±V
I
V
V
V
V
V
R
I
I
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound Applied
Case temperature measured point is just under the chips (1/2 module)
C
C
E
E
C
C
CE
CE
GE
CC
CC
GE
G
= 20mA, V
= 200A, V
= 200A
= 200A, V
’ = 25°C
GE
= 25°C
= 6.3Ω, Inductive load
°
= V
= 10V
= 0V
= 300V, I
= 300V, I
= ±15V
C, unless otherwise specified)
= V
CES
GES
*4
, V
GE
GE
CE
, V
C
C
GE
= 200A, V
= 200A
= 0V
= 15V
CE
= 10V
= 0V
= 0V
Test conditions
Conditions
2
GE
= 15V
j
) does not exceed T
*2
(1/2 module)
T
T
j
j
= 25°C
= 125°C
(Note 2)
(Note 2)
HIGH POWER SWITCHING USE
MITSUBISHI IGBT MODULES
CM200DU-12NFH
jmax
Min.
3.1
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—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5
rating.
–40 ~ +150
–40 ~ +125
2.5 ~ 3.5
3.5 ~ 4.5
Ratings
Limits
2500
1240
Typ.
1.95
0.07
600
±20
200
400
200
400
590
830
310
2.0
3.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6
0.15
Max.
0.21
0.35
250
150
500
150
150
0.5
2.7
3.6
2.0
2.6
55
31
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1
7
*3
Feb. 2009
N • m
N • m
Vrms
K/W
K/W
K/W
K/W
Unit
Unit
mA
nC
µC
µA
nF
nF
nF
°C
°C
ns
ns
ns
ns
ns
W
W
V
Ω
V
V
A
A
A
A
V
V
g