CM200DU-12NFH_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM200DU-12NFH_09 Datasheet - Page 4

• Manufacturer Part Number: CM200DU-12NFH_09
• Description: IGBT MODULES HIGH POWER SWITCHING USE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

10
10
10
10
10
10
10
REVERSE RECOVERY CHARACTERISTICS
–1
–2
–3
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
10
0
10
1
–3
Per unit base =
R
IMPEDANCE CHARACTERISTICS
th(j–c)
2 3 5 7
t
I
rr
rr
2
EMITTER CURRENT I
OF FREE-WHEEL DIODE
= 0.35K/W
TRANSIENT THERMAL
10
3
–2
2 3 5 7
5 7
(FWDi part)
(TYPICAL)
TIME (s)
10
10
10
2
–1
–5
2 3 5 7
2 3 5 7
Conditions:
V
V
R
T
Inductive load
2
j
Single Pulse
T
CC
GE
G
= 25°C
C
10
10
= 6.3Ω
3
E
= 300V
= ±15V
= 25°C
0
–4
(A)
2 3 5 7
2 3 5 7
5 7
10
10
10
10
10
10
3
7
5
3
2
7
5
3
2
1
–3
–1
–2
–3
4
10
10
10
10
20
16
12
–1
–2
–3
8
4
0
7
5
3
2
7
5
3
2
7
5
3
2
0
10
0
–3
Per unit base =
R
I
C
IMPEDANCE CHARACTERISTICS
th(j–c)
2 3 5 7
200
= 200A
400
= 0.21K/W
GATE CHARGE Q
TRANSIENT THERMAL
10
CHARACTERISTICS
HIGH POWER SWITCHING USE
–2
600
GATE CHARGE
2 3 5 7
V
MITSUBISHI IGBT MODULES
(IGBT part )
(TYPICAL)
CC
CM200DU-12NFH
TIME (s)
800
= 200V
10
10
1000
–1
–5
2 3 5 7
2 3 5 7
1200
G
Single Pulse
T
V
C
(nC)
1400
10
CC
10
= 25°C
0
–4
= 300V
2 3 5 7
2 3 5 7
1600
1800
10
10
10
10
10
7
5
3
2
7
5
3
2
1
–3
Feb. 2009
–1
–2
–3