TIC216S COMSET [Comset Semiconductor], TIC216S Datasheet
TIC216S
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TIC216S Summary of contents
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... SEMICONDUCTORS TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S SILICON BIDIRECTIONAL TRIODE THYRISTOR • RMS • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max (Quadrants 1-3) GT • Sensitive gate triacs • Compliance to ROHS DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity ...
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... SEMICONDUCTORS TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S Notes: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at the rate of 150 mA/°C. ...
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... SEMICONDUCTORS TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S Note 6: This parameters must be measured using pulse techniques, t contacts, separate from the courrent-carrying contacts are located within 3.2mm (1/8 inch) from de device body. Note 7: The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics : R = 100Ω ...