TIC106C COMSET [Comset Semiconductor], TIC106C Datasheet
TIC106C
Manufacturer Part Number
TIC106C
Description
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
Manufacturer
COMSET [Comset Semiconductor]
Datasheet
1.TIC106C.pdf
(3 pages)
V
V
I
I
I
I
P
P
T
T
T
Symbol
T(RMS)
T(AV)
TM
GM
C
stg
L
DRM
RRM
GM
G(AV)
TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M,
TIC106N, TIC106S
ABSOLUTE MAXIMUM RATINGS
Notes:
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
•
•
•
•
•
•
1. These values apply when the gate-cathode resistance R
2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated
5. This value applies for a maximum averaging time of 20 ms.
5 A Continuous On-State Current
30 A Surge-Current
Glass Passivated Wafer
100 V to 800 V Off-State Voltage
Max I
Compliance to ROHS
Repetitive peak off-state voltage
(see Note1)
Repetitive peak reverse voltage
Continuous on-state current at (or below)
80°C case temperature (see note2)
Average on-state current (180° conduction
angle) at(or below) 80°C case temperature
(see Note3)
Surge on-state current (see Note4)
Peak positive gate current (pulse width
≤300 µs)
Peak power dissipation (pulse width ≤300
µs)
Average gate power dissipation (see
Note5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10
seconds
zero at 110°C.
resistive load. Above 80°C derate linearly to zero at 110°C.
value of peak reverse voltage and on-state current. Surge may be repeated after the device has
returned to original thermal equilibrium.
GT
of 200 µA
SEMICONDUCTORS
Ratings
Page 1 of 3
100 200 300 400 500 600 700 800
100 200 300 400 500 600 700 800
A
GK
B
= 1kΩ
C
-40 to +110
-40 to +125
D
Value
230
3.2
0.2
1.3
0.3
30
5
E
M
S
N
Unit
°C
°C
°C
W
W
V
V
A
A
A
A
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TIC106C Summary of contents
Page 1
... SEMICONDUCTORS TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • Continuous On-State Current • Surge-Current • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max I of 200 µA GT • Compliance to ROHS ABSOLUTE MAXIMUM RATINGS ...
Page 2
... SEMICONDUCTORS TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S THERMAL CHARACTERISTICS Symbol Gate-controlled t gt Turn-on time Circuit-communicated t q Turn-off time R ∂JC R ∂JA ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings I Repetitive peak off-state current DRM I Repetitive peak reverse current RRM I Gate trigger current ...
Page 3
... SEMICONDUCTORS TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S MECHANICAL DATA CASE TO-220 Pin 1 : kathode Pin 2 : Pin 3 : Page Anode Gate ...