eds1232aase Elpida Memory, Inc., eds1232aase Datasheet - Page 4

• Manufacturer Part Number: eds1232aase
• Description: 128m Bits Sdram
• Manufacturer: Elpida Memory, Inc.

Parameter
Supply voltage
Input high voltage
Input low voltage
Electrical Specifications
• All voltages are referenced to VSS (GND).
• After power up, execute power up sequence and initialization sequence before proper device operation is achieved
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to VSS
Supply voltage relative to VSS
Short circuit output current
Power dissipation
Operating ambient temperature
Storage temperature
Caution
Recommended DC Operating Conditions (TA = 0 to +70°C)
Notes: 1. VIH (max.) = VDDQ + 1.5V (pulse width ≤ 5ns).
Data Sheet E0350E31 (Ver. 3.1)
(refer to the Power up sequence).
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
2. VIL (min.) = –1.5V (pulse width ≤ 5ns).
Symbol
VDD, VDDQ
VSS
VIH
VIL
min.
3.0
0
2.0
–0.3*
Symbol
VT
VDD, VDDQ
IOS
PD
TA
Tstg
2
4
typ.
3.3
0
⎯
⎯
Rating
–0.5 to +4.6
–0.5 to +4.6
50
1.0
0 to +70
–55 to +125
max.
3.6
0
VDD + 0.3*
0.8
1
EDS1232AASE
Unit
V
V
mA
W
°C
°C
Unit
V
V
V
V
Note
Notes