ra08n1317m Quanzhou Jinmei Electronic Co.,Ltd., ra08n1317m Datasheet - Page 3

• Manufacturer Part Number: ra08n1317m
• Description: Mitsubishi Rf Mosfet Module
• Manufacturer: Quanzhou Jinmei Electronic Co.,Ltd.

TYPICAL PERFORMANCE
RA08N1317M
14
12
10
25
20
15
10
8
6
4
2
0
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER and DRAIN CURRENT
5
0
130
50
40
30
20
10
50
40
30
20
10
2
0
0
-15 -10
-15 -10
f=135MHz,
V
P
GG
in
=20mW
140
=3.5V,
FREQUENCY f(MHz)
4
DRAIN VOLTAGE V
versus DRAIN VOLTAGE
ρ
INPUT POWER P
Gp
INPUT POWER P
Gp
in
@P
150
-5
-5
out
6
=8W
P
η
out
T
I
@P
DD
0
0
@V
160
I
DD
ELECTROSTATIC SENSITIVE DEVICE
out
8
(T
GG
=8W
V
P
OBSERVE HANDLING PRECAUTIONS
5
5
=3.5V
DD
in
case
=20mW
in
in
=9.6V
170
(dBm)
(dBm)
DD
=+25°C, Z
10
10
10
f=135MHz,
V
V
(V)
DD
GG
P
f=175MHz,
V
V
P
out
=9.6V,
=3.5V
DD
GG
out
P
I
DD
15
out
=9.6V,
=3.5V
15
180
12
140
120
100
80
60
40
20
0
20
20
G
MITSUBISHI ELECTRIC
=Z
5
4
3
2
1
0
5
4
3
2
1
0
5
4
3
2
1
0
L
=50Ω, unless otherwise specified)
3/8
-20
-30
-40
-50
-60
-70
2
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
25
20
15
10
OUTPUT POWER and DRAIN CURRENT
nd
130
5
0
50
40
30
20
10
, 3
0
2
-15
rd
f=160MHz,
V
P
2
RoHS COMPLIANCE
HARMONICS versus FREQUENCY
GG
in
nd
=20mW
@P
=3.5V,
-10
140
4
versus DRAIN VOLTAGE
Gp
DRAIN VOLTAGE V
INPUT POWER P
out
FREQUENCY f(MHz)
=8W
-5
150
6
I
DD
0
3
rd
@P
8
160
5
out
in
(dBm)
=8W
V
P
DD
MITSUBISHI RF POWER MODULE
DD
in
10
=20mW
f=160MHz,
V
V
=9.6V
10
(V)
DD
GG
RA08N1317M
170
=9.6V,
=3.5V
P
P
15
out
out
I
DD
12
20
180
5
4
3
2
1
0
5
4
3
2
1
0
24 Jan 2006