PM75B4LB060_11 MITSUBISHI [Mitsubishi Electric Semiconductor], PM75B4LB060_11 Datasheet

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PM75B4LB060_11

Manufacturer Part Number
PM75B4LB060_11
Description
FLAT-BASE TYPE INSULATED PACKAGE
Manufacturer
MITSUBISHI [Mitsubishi Electric Semiconductor]
Datasheet
APPLICATION
Photo voltaic power conditioner
PM75B4LB060
PACKAGE OUTLINES
7.75
2.5
7
19.75
19.5
22
3.25
B
4
1
4
3-2
16
23
U
5
L A B E L
4
3-2
16
106
4
66.5
98.25
120
±0.25
9
23
3-2
V
16
19-■0.5
4
4
13
15.25
6-2
23
19
W
4
4
MITSUBISHI <INTELLIGENT POWER MODULES>
FEATURE
a) Adopting new 5th generation IGBT (CSTBT
b) Over-temperature protection by detecting Tj of the CSTBT
c) New small package
• 2φ 75A, 600V Current-sense IGBT type inverter
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short-
• UL Recognized
performance is improved by 1µm fine rule process.
For example, typical V
chips and error output is possible from all each conserva-
tion upper and lower arm of IPM.
Reduce the package size by 10%, thickness by 22% from
S-DASH series.
circuit, over-temperature & under-voltage (P-Fo available
from upper arm devices)
MOUNTING HOLES
2-φ5.5
PM75B4LB060
Yellow Card No.E80276(N)
ce
10. NC
Terminal code
1.5
1. VUPC
2. UFO
3. UP
4. VUP1
5. VVPC
6. VFO
7. VP
8. VVP1
9. NC
(sat)=1.55V @Tj=125°C
File No.E80271
INSULATED PACKAGE
9.5
11. NC
12. NC
13. VNC
14. VN1
15. NC
16. UN
17. VN
18. NC
19. Fo
17
16
FLAT-BASE TYPE
Dimensions in mm
3
TM
) chip, which
Oct. 2005
TM

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PM75B4LB060_11 Summary of contents

Page 1

PM75B4LB060 APPLICATION Photo voltaic power conditioner PACKAGE OUTLINES 19.75 16 3.25 3-2 3 2.5 19 7.75 MITSUBISHI <INTELLIGENT POWER MODULES> PM75B4LB060 FEATURE a) Adopting new ...

Page 2

INTERNAL FUNCTIONS BLOCK DIAGRAM 1.5k B MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol Parameter V Collector-Emitter Voltage CES ±I Collector Current C ±I Collector Current (Peak ...

Page 3

TOTAL SYSTEM Symbol Parameter Supply Voltage Protected by V CC(PROT Supply Voltage (Surge) CC(surge) Storage Temperature T stg V Isolation Voltage iso THERMAL RESISTANCES Symbol Parameter R Junction to case Thermal th(j-c)Q R Resistances th(j-c)F R Contact Thermal ...

Page 4

CONTROL PART Symbol Parameter I Circuit Current D V Input ON Threshold Voltage th(ON) Input OFF Threshold Voltage V th(OFF) Short Circuit Trip Level SC Short Circuit Current Delay t off(SC) Time OT Over Temperature Protection OT r Supply Circuit ...

Page 5

PRECAUTIONS FOR TESTING 1. Before appling any control supply voltage (V sponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. ...

Page 6

I F → ≥0.1µ 20k I → F ≥0.1µ 20k I F → ≥0.1µ 20k I F → ≥0.1µ NOTES FOR STABLE AND SAFE OPERATION ; • Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s ...

Page 7

PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 100 T = 25° 17V 0.5 1 COLLECTOR-EMITTER SATURATION VOLTAGE V COLLECTOR-EMITTER SATURATION VOLTAGE (VS CHARACTERISTICS D (TYPICAL) 2 1.5 1 0.5 I ...

Page 8

FWDi FORWARD VOLTAGE CHARACTERISTICS (TYPICAL 15V 25° 125° 0.5 1 1.5 2 EMITTER-COLLECTOR VOLTAGE V FWDi ...

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