PM75B4LB060_11 MITSUBISHI [Mitsubishi Electric Semiconductor], PM75B4LB060_11 Datasheet - Page 8

• Manufacturer Part Number: PM75B4LB060_11
• Description: FLAT-BASE TYPE INSULATED PACKAGE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

FWDi REVERSE RECOVERY LOSS CHARACTERISTICS
FWDi FORWARD VOLTAGE CHARACTERISTICS
10
10
10
10
10
10
10
10
10
10
10
–1
–2
–1
–2
–3
COLLECTOR REVERSE CURRENT –I
EMITTER-COLLECTOR VOLTAGE V
2
7
5
3
2
1
7
5
3
2
0
1
7
5
3
2
0
7
5
3
2
7
5
3
2
0
7
5
3
2
7
5
3
2
7
5
3
2
10
10
0
–5
0
Single Pulse
Per unit base = R
V
V
V
Inductive load
2 3 5 7
IMPEDANCE CHARACTERISTICS
D
CC
D
= 15V
= 15V
2
10
= 300V
0.5
T
T
–4
TRANSIENT THERMAL
j
j
2 3 5 7
3
= 25°C
= 125°C
E
rr
10
(IGBT PART)
5 7
–3
(TYPICAL)
(TYPICAL)
2 3 5 7
TIME (s)
1
10
th(j – c)Q
10
–2
1
2 3 5 7
1.5
2
10
= 0.32°C/W
–1
2 3 5 7
T
T
3
j
j
= 25°C
= 125°C
2
10
5 7
0
2 3 5 7
EC
C
10
2.5
(V)
(A)
10
2
1
FWDi REVERSE RECOVERY CHARACTERISTICS
10
10
10
10
10
10
10
10
–1
–2
–1
–2
–3
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
1
0
10
0
10
–5
0
Single Pulse
Per unit base = R
2 3 5 7
IMPEDANCE CHARACTERISTICS
COLLECTOR CURRENT I
2
10
–4
TRANSIENT THERMAL
2 3 5 7
3
I
t
rr
rr
10
(FWDi PART)
5 7
–3
(TYPICAL)
2 3 5 7
TIME (s)
10
th(j – c)F
10
–2
1
2 3 5 7
V
V
T
T
Inductive load
2
10
j
j
= 0.53°C/W
PM75B4LB060
CC
D
INSULATED PACKAGE
–1
= 25°C
= 125°C
2 3 5 7
= 15V
3
= 300V
C
10
(A)
5 7
FLAT-BASE TYPE
0
2 3 5 7
10
10
10
7
5
3
2
10
7
5
3
2
10
7
5
3
2
10
1
2
2
1
0
–1
Oct. 2005