PM75B4LB060_11 MITSUBISHI [Mitsubishi Electric Semiconductor], PM75B4LB060_11 Datasheet - Page 3

• Manufacturer Part Number: PM75B4LB060_11
• Description: FLAT-BASE TYPE INSULATED PACKAGE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

TOTAL SYSTEM
THERMAL RESISTANCES
(Note-1) Tc (under the chip) measurement point is below.
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
V
V
T
V
R
R
R
axis
V
V
t
t
t
t
t
I
on
rr
c(on)
off
c(off)
CES
Symbol
Symbol
Symbol
stg
CC(PROT)
CC(surge)
iso
CE(sat)
EC
th(j-c)Q
th(j-c)F
th(c-f)
X
Y
arm
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Storage Temperature
Isolation Voltage
Junction to case Thermal
Resistances
Contact Thermal Resistance
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Switching Time
Collector-Emitter
Cutoff Current
IGBT
30.4
–8.3
UP
Parameter
Parameter
Parameter
FWDi
30.4
–0.8
IGBT
61.7
–8.3
VP
FWDi
61.7
–0.8
V
T
Applied between : P-N, Surge value
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
Inverter IGBT part (per 1/4 module)
Inverter FWDi part (per 1/4 module)
Case to fin, (per 1 module)
Thermal grease applied
–I
V
V
T
Inductive Load
V
V
V
j
j
CE
D
D
CIN
D
CC
C
= +125°C Start
= 125°C
= 13.5 ~ 16.5V, Inverter Part,
= 15V, I
= 15V, V
= 75A, V
IGBT
= V
39.7
= 300V, I
6.3
= 0V
CES
Bottom view
UN
C
, V
FWDi
CIN
D
39.7
–1.2
= 75A
C
CIN
= 15V, V
= 0V↔15V
= 75A
= 15V
IGBT
52.4
6.3
Condition
Condition
Condition
CIN
(unit : mm)
VN
= 15V
FWDi
52.4
–1.2
(Fig. 5)
(Fig. 1)
T
T
T
T
j
j
j
j
= 25°C
= 125°C
= 25°C
= 125°C
(Fig. 3,4)
(Note-1)
(Note-1)
(Note-1)
(Fig. 2)
Min.
Min.
0.3
—
—
—
—
—
—
—
—
—
—
—
—
PM75B4LB060
INSULATED PACKAGE
–40 ~ +125
Ratings
Limits
Limits
2500
1.55
Typ.
Typ.
450
500
1.7
2.2
0.7
0.1
0.2
0.9
0.2
—
—
—
—
—
FLAT-BASE TYPE
0.038
Max.
Max.
2.3
2.0
0.32
0.53
3.3
1.4
0.2
0.4
1.8
0.4
10
1
Oct. 2005
°C/W
Unit
Unit
V
Unit
mA
°C
µs
V
V
rms
V
V