MK61FX512VMD12 FREESCALE [Freescale Semiconductor, Inc], MK61FX512VMD12 Datasheet - Page 37

• Manufacturer Part Number: MK61FX512VMD12
• Description: K61 Sub-Family
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3 Flash high voltage current behaviors
6.4.1.4 Reliability specifications
Freescale Semiconductor, Inc.
t
t
t
t
t
t
eewr16b128k
eewr16b256k
t
eewr32b128k
eewr32b256k
t
t
eewr16b64k
eewr32b64k
t
t
eewr32bers
nvmretp10k
nvmretd10k
n
Symbol
Symbol
nvmretp1k
nvmretd1k
nvmcycp
I
Symbol
I
DD_PGM
DD_ERS
16-bit write to FlexRAM execution time:
32-bit write to erased FlexRAM location
execution time
32-bit write to FlexRAM execution time:
Data retention after up to 10 K cycles
Data retention after up to 1 K cycles
Cycling endurance
Data retention after up to 10 K cycles
Data retention after up to 1 K cycles
Description
Description
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
Table 21. Flash command timing specifications (continued)
Average current
adder during high
voltage flash
programming
operation
Average current
adder during high
voltage flash erase
operation
Description
Table 22. Flash high voltage current behaviors
Table 23. NVM reliability specifications
K61 Sub-Family Data Sheet, Rev. 4, 10/2012.
Table continues on the next page...
Min.
—
—
Program Flash
Data Flash
10 K
Min.
Min.
20
20
—
—
—
—
—
—
—
5
5
Typ.
3.5
1.5
Peripheral operating requirements and behaviors
Typ.
50 K
Typ.
400
450
525
180
475
525
600
100
100
50
50
1
1700
1800
2000
1850
2000
2200
Max.
Max.
Max.
275
7.5
4.0
—
—
—
—
—
cycles
years
years
years
years
Unit
Unit
μs
μs
μs
μs
μs
μs
μs
Unit
mA
mA
Notes
Notes
2
37