NCP1611ADR2G ONSEMI [ON Semiconductor], NCP1611ADR2G Datasheet - Page 19

• Manufacturer Part Number: NCP1611ADR2G
• Description: Enhanced, High-Efficiency Power Factor Controller
• Manufacturer: ONSEMI [ON Semiconductor]

Current Information Generation
representative of the input current. In practice, I
by multiplying the internal control signal (V
internal signal that controls the on−time) by the sense
voltage (pin 4) that is proportional to the input voltage. The
Top: CrM operation when the current information exceeds the preset level during the demagnetization phase
Middle: the circuit re−starts at the next valley if the sum (ramp + current information) exceeds the preset level during the dead−time, while
the drain−source voltage is high
Bottom: the sum (ramp + current information) exceeds the preset level while during the dead−time, the drain−source voltage is low. The
circuit skips the current valley and re−starts at the following one.
The “FFcontrol” pin sources a current that is
REGUL
Figure 60. Dead−Time Generation
pin3
, i.e., the
is built
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19
multiplier gain (K
high−line conditions (that is when the “LLine” signal from
the brown−out block is in low state) so that I
voltage representative of the input current across resistor
R
current information.
FF
placed between pin 3 and ground. Pin 3 voltage is the
m
of Figure 61) is three times less in
pin3
provides a