NCP1611ADR2G ONSEMI [ON Semiconductor], NCP1611ADR2G Datasheet - Page 4

• Manufacturer Part Number: NCP1611ADR2G
• Description: Enhanced, High-Efficiency Power Factor Controller
• Manufacturer: ONSEMI [ON Semiconductor]

TYPICAL ELECTRICAL CHARACTERISTICS TABLE
specified)
CURRENT SENSE AND ZERO CURRENT DETECTION BLOCKS
STATIC OVP
ON−TIME CONTROL
FEED−BACK OVER AND UNDER−VOLTAGE PROTECTIONS (OVP AND UVP)
BROWN−OUT PROTECTION AND FEED−FORWARD
4. There is actually a minimum dead−time that is the delay between the core reset detection and the DRV turning on (T
R
T
T
R
softOVP(HYST)
V
“Current Sense and Zero Current Detection Blocks” section).
V
T
V
ON(HL)(MIN)
R
T
T
T
V
ON(LL)(MIN)
I
I
I
R
T
R
Symbol
V
UVP(HYST)
ZCD(bias)
ZCD(bias)
ZCD(gnd)
T
T
BO(HYST)
ZCD(hyst)
WDG(OS)
BO(blank)
LEB,OCP
LEB,OVS
ZCD(th)H
T
ZCD(th)L
fastOVP2
T
ON(LL)2
(I
T
R
V
T
ZCD/CS
CL(pos)
T
softOVP
V
D
ON(LL)
ON(HL)
SYNC
WDG
TMO
B
OCP
ZCD
BOH
UVP
BOL
MIN
)
FB
Ratio (Soft OVP Threshold, V
Over−Current Protection Delay from V
Minimum On Time, V
Minimum On Time, V
Over−Current Protection Leading Edge Blanking Time (guaranteed by design)
Ratio (UVP Threshold, V
Ratio (Fast OVP Threshold, V
“Overstress” Leading Edge Blanking Time (guaranteed by design)
Maximum On Time, V
Maximum On Time, V
Ratio (Soft OVP Hysteresis) over V
Ratio (UVP Hysteresis) over V
Hysteresis of the Zero Current Detection Comparator
FB Pin Bias Current @ V
Source Current for CS/ZCD pin impedance Testing
On Time, V
CS/ZCD Pin Bias Current, V
CS/ZCD Pin Bias Current, V
CS/ZCD Positive Clamp @ I
Watch Dog Timer in “OverStress” Situation
Duty Cycle, V
Zero Current Detection, V
Zero Current Detection, V
sense
sense
Brown−Out Threshold, V
(V
Brown−Out Threshold, V
Brown−Out Comparator Hysteresis
CS/ZCD
V
sense
Minimum ZCD Pulse Width
Brown−Out Blanking Time
= 1.4 V (not tested, guaranteed by characterization)
= 2.8 V (not tested, guaranteed by characterization)
ZCD(th)H
FB
(guaranteed by design)
sense
sense
FB
rising) over V
Watch Dog Timer
= 1.4 V and V
< V
Time−Out Timer
rising) over V
FB
dt = 10 V/ms)
by design)
ZCD (th )L
= 1.4 V and V
= 2.8 V and V
over V
Rating
design)
= 3 V, V
FB
CS/ZCD
FB
rising) over V
http://onsemi.com
REF
= V
CS(th)
) to (DRV high)
REF
REF
control
(Conditions: V
OV P
control
(guaranteed by design)
CS/ZCD
CS/ZCD
CS/ZCD
CS/ZCD
REF
> V
sense
CS/ZCD
sense
(guaranteed by design)
Ratio
(V
control
control
CS(th)
and V
4
UVP
Pin Open
(V
= 2.5 V (CrM)
falling
rising
softOVP
REF
falling
= 0.75 V
= 0.25 V
rising
= 5 mA
/V
maximum (CrM)
maximum (CrM)
FB
to DRV low (dV
REF
(V
= V
CC
fastOVP
/V
) (guaranteed by
REF
= 15 V, T
UVP
) (guaranteed
/V
REF
CS/ZCD
J
)
from −40°C to +125°C, unless otherwise
/
10.5
0.96
0.86
Min
100
675
200
375
400
104
106
1.4
0.5
0.5
7.3
1.5
50
80
20
22
50
60
35
−
−
−
−
−
−
−
−
8
−
15.6
12.5
1.00
0.90
Typ
200
100
750
250
500
200
800
250
105
107
200
100
110
1.5
8.5
2.0
40
60
30
25
12
50
−
−
−
−
−
−
ZD
1200
Max
14.0
1.04
0.94
parameter of the
350
170
200
825
300
200
200
320
200
100
106
108
450
1.6
2.0
2.0
9.6
2.5
50
29
16
65
−
−
−
0
1
−
Unit
mV
mV
mV
mV
nA
ms
mA
mA
mA
ns
ns
ns
ns
ns
ms
ms
ms
ms
ms
ms
ns
ns
%
%
%
%
%
%
V
V
V
−