K4S161622D-TC/L10 Samsung semiconductor, K4S161622D-TC/L10 Datasheet - Page 30
![no-image](/images/manufacturer_photos/0/5/578/samsung_semiconductor_sml.jpg)
K4S161622D-TC/L10
Manufacturer Part Number
K4S161622D-TC/L10
Description
512K x 16Bit x 2 Banks Synchronous DRAM
Manufacturer
Samsung semiconductor
Datasheet
1.K4S161622D-TCL10.pdf
(41 pages)
- Current page: 30 of 41
- Download datasheet (2Mb)
CLOCK
K4S161622D
Page Write Cycle at Different Bank @Burst Length=4
A
ADDR
10
DQM
CKE
RAS
CAS
WE
/AP
DQ
CS
BA
*Note :
0
Row Active
(A-Bank)
RAa
RAa
1
1. To interrupt burst write by Row precharge, DQM should be asserted to mask invalid input data.
2. To interrupt burst write by Row precharge, both the write and the precharge banks must be the same.
2
3
(A-Bank)
DAa0 DAa1 DAa2
Write
CAa
4
Row Active
(B-Bank)
RBb
RBb
5
6
DAa3
tCDL
7
(B-Bank)
Write
DBb0 DBb1 DBb2 DBb3
CBb
8
9
HIGH
10
11
(A-Bank)
Write
DAc0 DAc1
CAc
12
13
(B-Bank)
Write
DBd0 DBd1
CBd
14
*Note 1
15
tRDL
(Both Banks)
Precharge
CMOS SDRAM
16
*Note 2
17
18
: Don't care
19
Related parts for K4S161622D-TC/L10
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
![K4S161622D-TC/L55](/images/no-image3.png)
Part Number:
Description:
512K x 16Bit x 2 Banks Synchronous DRAM
Manufacturer:
SAMSUNG [Samsung semiconductor]
Datasheet:
![K4S161622D-TI/E50](/images/no-image3.png)
Part Number:
Description:
1M x 16 SDRAM
Manufacturer:
SAMSUNG [Samsung semiconductor]
Datasheet:
![K4S161622D-TC10000](/images/manufacturer_photos/0/5/578/samsung_semiconductor_tmb.jpg)
Part Number:
Description:
Manufacturer:
Samsung Semiconductor
Datasheet:
![k4s161622d](/images/no-image3.png)
Part Number:
Description:
512k X 16bit X 2 Banks Synchronous Dram
Manufacturer:
Samsung Semiconductor, Inc.
Datasheet:
![K4S161622D-TI/E10](/images/manufacturer_photos/0/5/578/samsung_semiconductor_tmb.jpg)
Part Number:
Description:
1M x 16 SDRAM
Manufacturer:
Samsung semiconductor
Datasheet:
![K4D551638F-TC50](/images/manufacturer_photos/0/5/577/samsung_tmb.jpg)
Part Number:
Description:
K4D551638F-TC50Samsung semiconductor [256Mbit GDDR SDRAM]
Manufacturer:
Samsung
Datasheet:
![K5A3280YBC-T755](/images/manufacturer_photos/0/5/577/samsung_tmb.jpg)
Part Number:
Description:
K5A3280YBC-T755Samsung semiconductor [MCP MEMORY]
Manufacturer:
Samsung
Datasheet:
![IRF252](/images/manufacturer_photos/0/5/578/samsung_semiconductor_tmb.jpg)
Part Number:
Description:
N-CHANNEL POWER MOSFETS
Manufacturer:
Samsung semiconductor
Datasheet:
![IRF342](/images/manufacturer_photos/0/5/578/samsung_semiconductor_tmb.jpg)
Part Number:
Description:
N-CHANNEL POWER MOSFETS
Manufacturer:
Samsung semiconductor
Datasheet:
![IRF422](/images/manufacturer_photos/0/5/578/samsung_semiconductor_tmb.jpg)
Part Number:
Description:
N-CHANNEL POWER MOSFETS
Manufacturer:
Samsung semiconductor
Datasheet:
![irfs630](/images/no-image3.png)
Part Number:
Description:
Transistor,mosfet,n-channel,200v V Br Dss,5.9a
Manufacturer:
Samsung Semiconductor, Inc.
Datasheet:
![KA3S0765R](/images/no-image3.png)
Part Number:
Description:
Samsung Power Switch
Manufacturer:
Samsung Semiconductor, Inc.
Datasheet:
![mmdoe28gxmsp-0va](/images/no-image3.png)
Part Number:
Description:
Samsung Pm410 Ssd 1.8 Lif 128/64gb
Manufacturer:
Samsung Semiconductor, Inc.
Datasheet:
![IRF122](/images/manufacturer_photos/0/5/578/samsung_semiconductor_tmb.jpg)
Part Number:
Description:
N-CHANNEL POWER MOSFETS
Manufacturer:
Samsung semiconductor
Datasheet:
![IRF131](/images/manufacturer_photos/0/5/578/samsung_semiconductor_tmb.jpg)
Part Number:
Description:
N-CHANNEL POWER MOSFETS
Manufacturer:
Samsung semiconductor
Datasheet: