K4S161622D-TC/L10 Samsung semiconductor, K4S161622D-TC/L10 Datasheet - Page 33

• Manufacturer Part Number: K4S161622D-TC/L10
• Description: 512K x 16Bit x 2 Banks Synchronous DRAM
• Manufacturer: Samsung semiconductor

DQ
CLOCK
K4S161622D
Read & Write Cycle with Auto Precharge II @Burst Length=4
A
ADDR
DQM
10
CKE
RAS
CAS
WE
/AP
CS
BA
CL=2
CL=3
*Note :
0
Row Active
(A-Bank)
Ra
Ra
1
* Any command to A-bank is not allowed in this period.
tRP is determined from at auto precharge start point
2
3
4
Auto Precharge
Read with
(A-Bank)
Ca
5
6
Qa0
7
*
Qa1
Qa0
Auto Precharge
Row Active
8
Start Point
(A-Bank)
(B-Bank)
Qa2
Rb
Rb
Qa1
9
HIGH
Qa3
Qa2
10
Auto Precharge
Qa3
Cb
Read with
(B-Bank)
11
12
Qb0
13
Qb1
Auto Precharge
Qb0
14
Start Point
(B-Bank)
Qb2
Qb1
15
CMOS SDRAM
Qb3
Qb2
16
Qb3
17
18
: Don't care
19