GS8320Z18T ETC, GS8320Z18T Datasheet

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GS8320Z18T

Manufacturer Part Number
GS8320Z18T
Description
(GS8320Z18T/36T) 36Mb Pipelined and Flow Through Synchronous NBT SRAM
Manufacturer
ETC
Datasheet
100-Pin TQFP
Commercial Temp
Industrial Temp
Features
• NBT (No Bus Turn Around) functionality allows zero wait
• 2.5 V or 3.3 V +10%/–5% core power supply
• 2.5 V or 3.3 V I/O supply
• User-configurable Pipeline and Flow Through mode
• LBO pin for Linear or Interleave Burst mode
• Pin compatible with 2Mb, 4Mb, 8Mb, and 16Mb devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ Pin for automatic power-down
• JEDEC-standard 100-lead TQFP package
Rev: 1.01 10/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc.
Flow Through
Through
Pipeline
read-write-read bus utilization; Fully pin-compatible with
both pipelined and flow through NtRAM™, NoBL™ and
ZBT™ SRAMs
3-1-1-1
2-1-1-1
3.3 V
2.5 V
Flow
3.3 V
2.5 V
Read/Write
Pipelined
Address
Data I/O
Data I/O
Clock
Curr
Curr
Curr
Curr
Curr
Curr
Curr
Curr
tCycle
tCycle
t
t
(x32/x36)
(x32/x36)
(x32/x36)
(x32/x36)
KQ
KQ
(x18)
(x18)
(x18)
(x18)
A
R
Flow Through and Pipelined NBT SRAM Back-to-Back Read/Write Cycles
-250 -225 -200 -166 -150 -133 Unit
365
430
360
420
200
230
200
225
2.3
4.0
6.0
7.0
36Mb Pipelined and Flow Through
335
390
330
380
200
230
200
225
2.5
4.4
6.5
7.5
Q
A
W
B
300
350
295
340
180
195
180
195
3.0
5.0
7.5
8.5
Synchronous NBT SRAM
265
305
260
295
180
195
180
195
3.5
6.0
8.5
10
240
280
235
270
180
195
180
195
3.8
6.6
10
10
Q
D
B
A
C
R
220
245
215
235
135
145
130
145
4.0
7.5
11
15
1/25
mA
mA
mA
mA
mA
mA
mA
mA
ns
ns
ns
ns
Functional Description
The GS8320Z18/36T is a 36Mbit Synchronous Static SRAM.
GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other
pipelined read/double late write or flow through read/single
late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS8320Z18/36T may be configured by the user to operate
in Pipeline or Flow Through mode. Operating as a pipelined
synchronous device, meaning that in addition to the rising edge
triggered registers that capture input signals, the device
incorporates a rising-edge-triggered output register. For read
cycles, pipelined SRAM output data is temporarily stored by
the edge triggered output register during the access cycle and
then released to the output drivers at the next rising edge of
clock.
The GS8320Z18/36T is implemented with GSI's high
performance CMOS technology and is available in a JEDEC-
standard 100-pin TQFP package.
Q
D
C
B
W
D
GS8320Z18/36T-250/225/200/166/150/133
D
Q
D
C
R
E
© 2001, Giga Semiconductor, Inc.
Q
D
250 MHz–133 MHz
E
D
2.5 V or 3.3 V V
Product Preview
W
F
2.5 V or 3.3 V I/O
Q
E
DD

Related parts for GS8320Z18T

GS8320Z18T Summary of contents

Page 1

... Synchronous NBT SRAM Functional Description The GS8320Z18/36T is a 36Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles ...

Page 2

... GS8320Z18T Pinout 100 DDQ DDQ DDQ ...

Page 3

GS8320Z36T Pinout 100 DDQ ...

Page 4

TQFP Pin Descriptions Pin Location Symbol 37 35, 34, 33, 32, 100, 99, 82, 81, 44, 45, 46,47, 48, 49, 50, 83, 84, A – ...

Page 5

... GS8320Z18/36 NBT SRAM Functional Block Diagram Rev: 1.01 10/2001 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS8320Z18/36T-250/225/200/166/150/133 Amps Sense Drivers Write 5/25 Product Preview © 2001, Giga Semiconductor, Inc. ...

Page 6

... A B cycle with no Byte Write inputs active is a no-op cycle. The pipelined NBT SRAM provides double late write functionality, matching the write command versus data pipeline length (2 cycles) to the read command versus data pipeline length (2 cycles). At the first rising edge of clock, Enable, Write, Byte Write(s), and Address are registered. The Data In associated with that address is required at the third rising edge of clock ...

Page 7

... Dummy Read and Write abort can be considered NOPs because the SRAM performs no operation. A Write abort occurs when the W pin is sampled low but no Byte Write pins are active so no write operation is performed can be wired low to minimize the number of control signals provided to the SRAM. Output drivers will automatically turn off during write cycles. 4. ...

Page 8

Pipeline and Flow Through Read Write Control State Diagram New Read R R Burst Read B Key Input Command Code ƒ Transition Current State (n) Next State (n+1) n Clock (CK) Command Current State Current State and Next State Definition ...

Page 9

Pipeline Mode Data I/O State Diagram Intermediate B W High Z (Data In) Key Input Command Code ƒ Transition Current State (n) Intermediate State (N+1) Clock (CK) Command Current State and Next State Definition for Rev: 1.01 10/2001 Specifications cited ...

Page 10

Flow Through Mode Data I/O State Diagram B W High Z (Data In) Key Input Command Code ƒ Transition Current State (n) Clock (CK) Command Current State and Next State Definition for: Rev: 1.01 10/2001 Specifications cited are subject to ...

Page 11

... SRAM to advance the internal address counter and use the counter generated address to read or write the SRAM. The starting address for the first cycle in a burst cycle series is loaded into the SRAM by driving the ADV pin low, into Load mode ...

Page 12

... GSI NBT SRAMs are fully compatible with these sockets. Pin 66 Connect (NC) on GSI’s GS8320Z18/36 NBT SRAM, the Parity Error open drain output on GSI’s GS8321Z18/36 NBT SRAM, is often marked as a power pin on other vendor’s NBT compatible SRAMs. Specifically marked V on pipelined parts and V on flow through parts. Users of GSI NBT devices who are not actually using the ByteSafe™ ...

Page 13

Absolute Maximum Ratings ) (All voltages reference Symbol V Voltage Voltage in V DDQ V Voltage on Clock Input Pin CK V Voltage on I/O Pins I/O V Voltage on Other Input Pins ...

Page 14

Power Supply Voltage Ranges Parameter 3.3 V Supply Voltage 2.5 V Supply Voltage 3 I/O Supply Voltage DDQ 2 I/O Supply Voltage DDQ Notes: 1. The part numbers of Industrial Temperature Range versions end the character ...

Page 15

... Junction to Ambient (at 200 lfm) Junction to Ambient (at 200 lfm) Junction to Case (TOP) Notes: 1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper- ature air flow, board density, and PCB thermal resistance. 2. SCMI G-38-87 3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1 Rev: 1 ...

Page 16

AC Test Conditions Parameter Input high level Input low level Input slew rate Input reference level Output reference level Output load Notes: 1. Include scope and jig capacitance. 2. Test conditions as specified with output loading as shown in Fig. ...

Page 17

Rev: 1.01 10/2001 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS8320Z18/36T-250/225/200/166/150/133 17/25 Product Preview © 2001, Giga Semiconductor, Inc. ...

Page 18

AC Electrical Characteristics Parameter Symbol Clock Cycle Time Clock to Output Valid Pipeline Clock to Output Invalid tKQX Clock to Output in Low-Z Clock Cycle Time Clock to Output Valid Flow Through Clock to Output Invalid tKQX Clock to Output ...

Page 19

Pipeline Mode Read/Write Cycle Timing CKE ADV – – Write Write COMMAND D(A2) D(A1) ...

Page 20

Pipeline Mode No-Op, Stall and Deselect Timing CKE ADV – Write D(A1) COMMAND *Note High (False ...

Page 21

Flow Through Mode Read/Write Cycle Timing CKE ADV – D(A1 Write COMMAND D(A1) *Note High ...

Page 22

Flow Through Mode No-Op, Stall and Deselect Timing CKE ADV –An DQ Write COMMAND D(A1) *Note High (False ...

Page 23

TQFP Package Drawing Symbol Description Min. Nom. Max A1 Standoff 0.05 A2 Body Thickness 1.35 b Lead Width 0.20 c Lead Thickness 0.09 D Terminal Dimension 21.9 D1 Package Body 19.9 E Terminal Dimension 15.9 E1 Package Body 13.9 e ...

Page 24

... GS8320Z18T-150 GS8320Z18T-133 GS8320Z36T-250 GS8320Z36T-225 GS8320Z36T-200 GS8320Z36T-166 GS8320Z36T-150 GS8320Z36T-133 GS8320Z18T-250I GS8320Z18T-225I GS8320Z18T-200I GS8320Z18T-166I GS8320Z18T-150I GS8320Z18T-133I GS8320Z36T-250I GS8320Z36T-225I GS8320Z36T-200I GS8320Z36T-166I GS8320Z36T-150I GS8320Z36T-133I Notes: 1. ...

Page 25

... Sync SRAM Datasheet Revision History DS/DateRev. Code: Old; Types of Changes New Format or Content 8320Z18_r1 8320Z18_r1; 8320Z18_r1_01 Rev: 1.01 10/2001 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS8320Z18/36T-250/225/200/166/150/133 Page;Revisions;Reason • Creation of new datasheet • Corrected pinouts—moved A19 from pin 39 to pin 43; changed pin 39 ...

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